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ROHM N-Channel MOSFET, 70 A, 600 V Enhancement Mode, 3-Pin Through Hole R6070JNZ4C13
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 21.25mm |
| Length | 16.24mm |
| Model | R6070JNZ4C13 |
| Width | 2.71mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 58mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 770W |
| Typical Gate Charge Qg @ Vgs | 165nC |
| Maximum Gate Source Voltage Vgs | 30V |
Key Features
- This enhancement mode MOSFET features fast switching speed suitable for power switching applications.
- It has a low on-resistance of 58 mΩ, optimizing power efficiency.
- The device supports a maximum power dissipation of 770 W, suitable for demanding thermal conditions.
- Operating temperature ranges from -55°C to 150°C, allowing use in harsh environments.
- The gate charge is typically 165 nC at Vgs, facilitating fast drive capabilities.
- Maximum gate-source voltage rating is 30 V, ensuring robust control characteristics.
- Lead-free plating compliant with RoHS standards ensures environmentally friendly manufacturing.
Product Description
The ROHM R6070JNZ4C13 is a high-performance N-Channel MOSFET designed for power switching applications. It offers a maximum continuous drain current of 70 A and a drain-source voltage rating of 600 V, making it suitable for industrial, automotive, and consumer electronics use.
This transistor operates in enhancement mode, featuring a low drain-source resistance of 58 mΩ that enhances energy efficiency by minimizing conduction losses. The fast switching speed of the device optimizes its performance in switching power supplies, motor drivers, and EV charging station circuits.
The device’s wide operating temperature range from -55°C to 150°C ensures reliability under harsh thermal conditions. Its maximum power dissipation capability of 770 W supports demanding power management tasks while maintaining device stability.
The package is a 3-pin through-hole type with compact dimensions (16.24 mm length, 2.71 mm width, and 21.25 mm height) facilitating easy integration into various circuit boards. Lead-free and RoHS compliant, the MOSFET conforms to environmental regulations.
Enhancement mode N-Channel MOSFET with 3-pin through-hole mounting. Maximum continuous drain current of 70 A and drain-source voltage of 600 V. Low on-resistance of 58 milliohms for efficient conduction. Operating temperature from -55°C up to 150°C for robust performance.
Typical gate charge of 165 nC enables fast switching. Maximum gate-source voltage of 30 V for controlled gate drive. High power dissipation rating of 770 W suits demanding applications. Compliance with RoHS and lead-free plating standards.
This power MOSFET finds applications in industrial electronics, power management, automotive electronics, consumer appliances, and HVAC systems. Its robust construction and electrical characteristics enable it to deliver reliable switching performance for power circuits requiring high efficiency and durability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 70 A.
This MOSFET has a drain-source voltage rating of 600 V.
It features a low on-resistance of 58 mΩ, optimizing power efficiency during operation.
The operating temperature range for this model is from -55°C to 150°C.
The maximum power dissipation capability is 770 W, suitable for demanding thermal conditions.
The typical gate charge is 165 nC at Vgs, facilitating fast drive capabilities.
This model uses a 3-pin through-hole mounting type for easy integration into circuit boards.
The maximum gate-source voltage rating for this device is 30 V.
It is suitable for power switching applications in industrial, automotive, and consumer electronics.
The dimensions of this model are 16.24 mm in length, 2.71 mm in width, and 21.25 mm in height.
Yes, it is lead-free and compliant with RoHS standards, ensuring environmentally friendly manufacturing.
This device operates in enhancement mode, which is typical for N-channel MOSFETs.
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