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ROHM N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin UMT BSS138BKWT106

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ROHM N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin UMT BSS138BKWT106

Name: ROHM N-Channel MOSFET 380 mA 60 V Enhancement 3-Pin UMT BSS138BKWT106
Brand: ROHM
SKU: 173651
Price: 0.1 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	1mm
Length	2.1mm
Model	BSS138BKWT106
Width	1.35mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	UMT
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	380mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	680mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

This transistor operates with an enhancement channel mode for reliable switching applications.
The device features low drain-source resistance of 680 milliohms for efficient power dissipation.
Maximum power dissipation is 300 milliwatts, suitable for low-power electronic circuits.
Operates at ambient temperatures ranging from -55°C to 150°C, ensuring stability in diverse environments.
The package is a compact 3-pin UMT type, optimized for surface mounting on PCBs.
Maximum gate-source voltage rating is 20 volts, with a forward voltage of 1.2 volts for conduction.
Ideal for switching circuits, high-side load switches, and relay driver uses in industrial and automotive applications.
Lead plating is Pb-free and the device is halogen-free, supporting environmental compliance.

Product Description

ROHM BSS138BKWT106 is a high-reliability N-Channel Enhancement MOSFET with a maximum continuous drain current of 380 mA and maximum drain-source voltage of 60 V, housed in a compact 3-pin UMT surface mount package. This transistor is designed for efficient switching and load control applications including high-side switches and relay drivers in industrial, automotive, and electronic power management systems.

The device features a low drain-source resistance of 680 milliohms, allowing for minimal power loss and heat generation. It is rated for power dissipation up to 300 milliwatts, suitable for a variety of low-power circuit requirements. Operating temperature range from -55°C to 150°C ensures reliability in harsh environments.

Key technical characteristics include a maximum gate-source voltage of 20 volts and a forward voltage of 1.2 volts during conduction. Its Pb-free lead plating and halogen-free construction underscore its environmentally compliant manufacturing process.

This MOSFET is particularly suited for use in industrial automation, consumer electronics, automotive electronics, and other sectors requiring durable and efficient semiconductor switching elements.

This transistor operates with an enhancement channel mode for reliable switching applications. Low drain-source on-resistance offers high efficiency. High maximum operating temperature tolerance for extended reliability.

Compact 3-pin UMT surface mount package for space-saving PCB design. Pb-free and halogen-free component suitable for environmentally responsible designs.

Package contents include one ROHM BSS138BKWT106 MOSFET per unit. Explore our collection of semiconductor devices for diverse electrical and electronic engineering solutions at EnvMart.