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| Country of Origin | Thailand |
|---|---|
| Brand | ROHM |
| Height | 3mm |
| Length | 3.1mm |
| Model | IMX25T110 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | IMX25 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-457 |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 20V |
| Minimum DC Current Gain hFE | 820 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 25V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | 300mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 10MHz |
The ROHM IMX25T110 transistor is a highly compact bipolar transistor designed for industrial and electronic applications requiring reliable low-power amplification and switching. This transistor features a maximum DC collector current of 300 mA and a maximum collector emitter voltage of 20 V, making it suitable for use in sensitive pre-amplifier differential amplification circuits, driver ICs, and high-frequency oscillator circuits.
The device is housed in a small 6-pin SOT-457 surface mount package with compact dimensions of 3.1 mm length, 1.3 mm width, and 3 mm height, helping to save PCB space while delivering excellent performance. The transistor configuration is isolated with an NPN polarity that provides stable and efficient current control.
With a maximum power dissipation of 300 mW and a high minimum DC current gain (hFE) of 820, the IMX25T110 ensures efficient amplification at low power consumption. It also supports a maximum operating temperature of 150°C, making it reliable under demanding thermal conditions. The maximum collector base voltage is 50 V, and the maximum emitter base voltage is 25 V, allowing robust operation within these voltage limits.
This transistor is lead-free (Pb Free) and complies with environmental regulations. Its maximum transition frequency of 10 MHz facilitates high-speed circuit operation in communications, industrial control, and consumer electronics.
Applications include use in industrial, manufacturing, and electronic assembly sectors, particularly in pre-amplifier circuits, oscillators, and switching circuits that require low noise and high gain performance.
The transistor has an isolated NPN configuration for precise control. Compact 6-pin SOT-457 package dimensions save board space. Maximum collector current 300 mA and power dissipation 300 mW for low power use. High current gain of 820 supports efficient amplification.
Maximum operating temperature up to 150°C ensures durability. Maximum voltage ratings: collector emitter 20 V, collector base 50 V, emitter base 25 V. High-frequency performance with 10 MHz transition frequency. Lead-free and environmentally compliant package.
Ideal for pre-amplifier differential circuits, oscillators, and general switching. Explore more electronics components and semiconductors at EnvMart for your industrial and manufacturing needs.
Explore more products in our Bipolar Transistors category.
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