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ROHM 300 mA NPN Transistor, 20 V, 6-Pin SOT-457 Surface Mount IMX25T110

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin Thailand
Brand ROHM
Height 3mm
Length 3.1mm
Model IMX25T110
Width 1.3mm
Mount Type Surface
Series IMX25
Maximum Operating Temperature 150°C
Package Type SOT-457
Pin Count 6
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 820
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 25V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 300mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 10MHz

Key Features

  • The transistor has an isolated configuration for stable performance.
  • Maximum DC collector current capacity is 300 mA.
  • Maximum power dissipation is 300 mW, suitable for low power applications.
  • High minimum DC current gain of 820 ensures efficient amplification.
  • Supports a maximum operating temperature of 150°C for reliable use in various environments.
  • Designed primarily for pre-amplifier differential amplification circuits and oscillators.
  • Package type SOT-457 is Pb Free and suitable for high-frequency applications.
  • Maximum transition frequency of 10 MHz supports high-speed switching.

Product Description

The ROHM IMX25T110 transistor is a highly compact bipolar transistor designed for industrial and electronic applications requiring reliable low-power amplification and switching. This transistor features a maximum DC collector current of 300 mA and a maximum collector emitter voltage of 20 V, making it suitable for use in sensitive pre-amplifier differential amplification circuits, driver ICs, and high-frequency oscillator circuits.

The device is housed in a small 6-pin SOT-457 surface mount package with compact dimensions of 3.1 mm length, 1.3 mm width, and 3 mm height, helping to save PCB space while delivering excellent performance. The transistor configuration is isolated with an NPN polarity that provides stable and efficient current control.

With a maximum power dissipation of 300 mW and a high minimum DC current gain (hFE) of 820, the IMX25T110 ensures efficient amplification at low power consumption. It also supports a maximum operating temperature of 150°C, making it reliable under demanding thermal conditions. The maximum collector base voltage is 50 V, and the maximum emitter base voltage is 25 V, allowing robust operation within these voltage limits.

This transistor is lead-free (Pb Free) and complies with environmental regulations. Its maximum transition frequency of 10 MHz facilitates high-speed circuit operation in communications, industrial control, and consumer electronics.

Applications include use in industrial, manufacturing, and electronic assembly sectors, particularly in pre-amplifier circuits, oscillators, and switching circuits that require low noise and high gain performance.

The transistor has an isolated NPN configuration for precise control. Compact 6-pin SOT-457 package dimensions save board space. Maximum collector current 300 mA and power dissipation 300 mW for low power use. High current gain of 820 supports efficient amplification.

Maximum operating temperature up to 150°C ensures durability. Maximum voltage ratings: collector emitter 20 V, collector base 50 V, emitter base 25 V. High-frequency performance with 10 MHz transition frequency. Lead-free and environmentally compliant package.

Ideal for pre-amplifier differential circuits, oscillators, and general switching. Explore more electronics components and semiconductors at EnvMart for your industrial and manufacturing needs.

Explore more products in our Bipolar Transistors category.

ROHM 300 mA NPN Transistor, 20 V, 6-Pin SOT-457 Surface Mount IMX25T110
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Frequently Asked Questions

The maximum DC collector current for this transistor is 300 mA.

The maximum collector emitter voltage (Vceo) is 20 V.

This model comes in a SOT-457 package type with 6 pins.

The transistor has a minimum DC current gain (hFE) of 820.

The maximum power dissipation is 300 mW.

The maximum collector base voltage (VCBO) is 50 V, and the maximum emitter base voltage (VEBO) is 25 V.

The maximum operating temperature for this transistor is 150°C.

The maximum transition frequency is 10 MHz.

This transistor features an isolated NPN configuration.

The dimensions are 3.1 mm in length, 1.3 mm in width, and 3 mm in height.

It is suitable for pre-amplifier differential amplification circuits, oscillators, and switching circuits.

The country of origin for this transistor is Thailand.

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