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ROHM P-Channel MOSFET 4 A 12 V Enhancement 3-Pin SOT-323 RAF040P01TCL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 820μm |
| Length | 2.1mm |
| Model | RAF040P01TCL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RAF040P01 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-323 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 68mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 800mW |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current is 4 A ensuring effective power control.
- Maximum drain-source voltage rating of 12 V suitable for low-voltage applications.
- Enhancement mode channel provides improved switching characteristics.
- Low drain-source resistance of 68 mΩ minimizes conduction losses.
- Maximum power dissipation rating of 800 mW for efficient thermal management.
- Wide operating temperature range from -55°C to 150°C enables reliable performance.
- Package dimensions are compact with height 820 μm, width 1.8 mm, and length 2.1 mm.
- Typical gate charge of 37 nC at specified gate voltage optimizes switching speed.
Product Description
ROHM RAF040P01TCL is a type P-Channel MOSFET designed for power switching and amplification applications. It supports a maximum continuous drain current of 4 A and a maximum drain-source voltage of 12 V, operating in enhancement mode for improved efficiency and control.
This MOSFET features a low Rds(on) of 68 milliohms to reduce conduction losses and provides a maximum power dissipation of 800 milliwatts, allowing it to handle moderate power levels reliably. Its wide temperature tolerance from -55°C to 150°C ensures suitability for industrial, consumer electronics, and automotive applications that require robust performance under diverse conditions.
The device is housed in a compact 3-pin SOT-323 surface-mount package, with precise dimensions enabling space-saving PCB designs. The typical gate charge of 37 nanocoulombs at a specified gate-source voltage enhances switching speed and efficiency in converting electrical signals.
Applications include power management circuits, switching regulators, load drivers, and other semiconductor circuit needs in industrial, automotive, and electronic equipment manufacturing.
Maximum continuous drain current: 4 A. Maximum drain-source voltage: 12 V. Enhancement mode for improved switching control. Package type: 3-pin SOT-323 surface mount. Low drain-source resistance of 68 milliohms. Power dissipation of 800 milliwatts.
Operating temperature range: -55°C to 150°C. Compact dimensions: 820 μm height, 1.8 mm width, 2.1 mm length. Typical gate charge: 37 nC at Vgs. Forward voltage drop of -1.2 V. Explore the comprehensive selection of ROHM semiconductor products at EnvMart for reliable, efficient electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
It has a maximum drain-source voltage rating of 12 V, making it suitable for low-voltage applications.
This MOSFET operates within a wide temperature range from -55°C to 150°C.
It is housed in a 3-pin SOT-323 surface mount package, with dimensions of 820 μm in height, 1.8 mm in width, and 2.1 mm in length.
The low drain-source resistance is 68 mΩ, which helps minimize conduction losses.
This model has a maximum power dissipation rating of 800 mW for efficient thermal management.
It features an enhancement mode channel, which provides improved switching characteristics.
The typical gate charge is 37 nC at the specified gate-source voltage.
It is suitable for power management circuits, switching regulators, and load drivers in various electronic applications.
The maximum gate-source voltage for this model is -8 V.
The forward voltage drop is -1.2 V.
The country of origin for this model is India.
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