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Renesas Electronics MOSFET Gate Driver 2 A Output Current, 14 V Supply, 8-Pin SOIC Package HIP2100IBZ

Category MOSFET Gate Driver Brand Renesas Electronics Condition New

Specifications

Country of Origin China
Brand Renesas Electronics
Height 1.5mm
Length 5mm
Model HIP2100IBZ
Width 4mm
Mount Type Surface
Series HIP2100
Output Current 2A
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Number of outputs 2
Rise Time 500ns
Pin Count 8
Minimum Supply Voltage 14V
Number of Drivers 2
Fall Time 500ns
Driver Type MOSFET
Renesas Electronics HIP2100IBZ, MOSFET 2, 2 A, 14V 8-Pin, SOICBrand Renesas Electronics

Key Features

  • Provides a dual output driver suitable for half bridge, full bridge, and three-phase applications.
  • Features MOSFET driver type with fast rise and fall times of 500 ns.
  • Operates reliably in a wide temperature range from -55°C to 150°C.
  • Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height ensure space-saving PCB integration.
  • Surface mount package type (SOIC) enables automated assembly for improved production efficiency.
  • Designed to handle voltage up to 14 V with two outputs and two drivers integrated.
  • Optimized for MOSFET and IGBT driver applications requiring low propagation delay.
  • Manufactured in China under the HIP2100 series by Renesas Electronics.

Product Description

Renesas Electronics HIP2100IBZ MOSFET Gate Driver is a high-performance dual-ouput driver IC designed for efficient switching of MOSFET and IGBT devices in power management applications. The device offers a continuous output current of 2 A and operates with a minimum and maximum supply voltage of 14 V. Packaged in an 8-pin SOIC surface mount package with compact physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height, it is suitable for constrained PCB space environments.

This MOSFET gate driver features fast rise and fall times of approximately 500 ns, ensuring swift switching transitions and minimizing switching losses. It integrates two outputs and two drivers, making it ideal for use in half-bridge, full-bridge, and three-phase driver topologies common in industrial, automotive, and power electronics applications.

The device supports wide operating temperature range from -55°C to 150°C, enabling reliable performance under harsh thermal conditions found in automotive and industrial settings. The surface mount SOIC footprint enables automated assembly lines improving production throughput and reducing manufacturing costs.

Being part of the Renesas HIP2100 series, this gate driver offers a proven solution for high-performance, low propagation delay switching required in advanced power management circuits targeting energy efficiency and system reliability.

Dual output MOSFET driver suitable for half bridge and three-phase systems. 2 A output current capacity with 14 V operating supply voltage. Fast 500 ns rise and fall times reduce switching losses. Compact 8-pin SOIC surface mount package for space efficient PCB design.

Wide temperature range operation from -55°C to +150°C. High reliability and performance for automotive and industrial applications. Manufactured in China ensuring compliance with industry quality standards.

This Renesas MOSFET Gate Driver HIP2100IBZ is perfect for enhancing the efficiency and performance of electronic power circuits. Available through EnvMart, browse more power management ICs and MOSFET drivers to find components that meet the specific requirements of your industrial, laboratory, automotive, or manufacturing application.

Renesas Electronics MOSFET Gate Driver 2 A Output Current, 14 V Supply, 8-Pin SOIC Package HIP2100IBZ
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