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Nexperia Silicon Junction Common Anode Switching Diode 225 mA 250 V SC-70 BAS21AW,115

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model BAS21AW,115
Width 1.35mm
Mount Type Surface
Series BAS21
Maximum Operating Temperature 150°C
Package Type SC-70
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Power Dissipation Pd 200mW
Diode Configuration Common Anode
Peak Non-Repetitive Forward Surge Current Ifsm 2.5A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 225mA
Maximum Peak Reverse Repetitive Voltage Vrrm 250V

Key Features

  • Maximum forward current of 225 mA for efficient conduction.
  • Package type SC-70 with compact surface mount design.
  • Peak reverse voltage up to 250 V for robust operation.
  • Maximum power dissipation is 200 mW ensuring reliable thermal performance.
  • Pin configuration includes 3 pins supporting common anode circuits.
  • Operating temperature ranges from -55°C to 150°C for wide environmental use.
  • Peak forward surge current rating of 2.5 A for transient protection.
  • Fast peak reverse recovery time of 4 ns enabling high frequency switching.

Product Description

The Nexperia BAS21AW,115 is a silicon junction switching diode designed for high-density circuit designs requiring low leakage currents and fast switching speeds. It features a common anode configuration and is housed in an SC-70 surface mount package, making it suitable for compact PCB layouts.

This diode supports a maximum continuous forward current of 225 mA and can withstand peak reverse repetitive voltages up to 250 V, ensuring reliable performance in switching and signal processing applications.

With a maximum power dissipation of 200 mW and operating temperature range from -55°C to 150°C, this component is suitable for demanding industrial and commercial environments.

The diode also offers a rapid peak reverse recovery time of 4 nanoseconds, facilitating efficient switching at high frequencies in telecommunications, power electronics, and control systems.

Its 3-pin common anode configuration allows integration into various circuit topologies while maintaining minimal footprint and weight. This diode is ideal for use in electronic components for power & connectors, semiconductor discrete components, and switching diode applications.

Maximum forward current of 225 mA ensuring efficient current conduction. Low capacitance and high voltage characteristics for circuit reliability. Compact SC-70 package suitable for surface mount technology. Peak forward surge current up to 2.5 A for transient handling.

Wide operating temperature range suitable for industrial uses. Fast recovery time enhancing switching performance at high frequencies. Robust construction supporting customized circuit designs. It is suitable for applications across industrial, manufacturing, power supply, and telecommunications sectors.

Discover more products in the Switching Diodes category at EnvMart for your electronic component needs.

Nexperia Silicon Junction Common Anode Switching Diode 225 mA 250 V SC-70 BAS21AW,115
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Frequently Asked Questions

The maximum forward current of the Nexperia BAS21AW,115 is 225 mA, allowing for efficient current conduction in circuit applications.

This diode can withstand a peak reverse repetitive voltage of up to 250 V, ensuring reliable performance in various applications.

It is housed in an SC-70 surface mount package, which is suitable for compact PCB layouts.

The operating temperature range for the Nexperia BAS21AW,115 is from -55°C to 150°C, making it suitable for a wide range of environmental conditions.

The peak forward surge current rating for this model is 2.5 A, providing transient protection in circuit applications.

It features a fast peak reverse recovery time of 4 nanoseconds, enabling efficient switching at high frequencies.

The BAS21AW,115 has a pin configuration of 3 pins, supporting common anode circuits.

The maximum power dissipation for this diode is 200 mW, ensuring reliable thermal performance during operation.

The dimensions of this diode are 1.1 mm in height, 2.2 mm in length, and 1.35 mm in width.

This model features a common anode configuration, making it suitable for various circuit topologies.

The country of origin for this diode is India.

The BAS21AW,115 is suitable for applications in telecommunications, power electronics, and control systems due to its fast switching capabilities.

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