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Nexperia 1-Element Bi-Directional TVS Diode 200 W, 2-Pin Surface Mount UMD PESD24VL1BA,115

Category TVS Diode Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.05mm
Length 1.8mm
Model PESD24VL1BA,115
Width 1.35mm
Mount Type Surface
Series PESD
Maximum Operating Temperature 150°C
Package Type UMD
Minimum Operating Temperature -65°C
Pin Count 2
Number of Elements per Chip 1
Clamping Voltage VC 70V
Automotive Standard AEC-Q101
Diode Configuration Single
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 25.4V
Maximum Reverse Stand-off Voltage Vwm 24V
Peak Pulse Power Dissipation Pppm 200W
Test Current It 5mA
Maximum Peak Pulse Current Ippm 3A
Maximum Reverse Leakage Current 50nA

Key Features

  • This TVS diode protects electronic circuits from ESD and transient voltage damage.
  • Supports bi-directional transient voltage suppression with a minimum breakdown voltage of 25.4 V.
  • Maximum reverse stand-off voltage is 24 V, suitable for low voltage protection.
  • Compact footprint of 1.8 mm length, 1.35 mm width, and 1.05 mm height for PCB space efficiency.
  • Operational temperature ranges from -65°C to 150°C, ensuring reliability under harsh conditions.
  • Peak pulse current rating is 3 A with a low maximum reverse leakage current of 50 nA.
  • Test current is 5 mA and clamping voltage is 70 V to limit transient spikes.
  • Certified to automotive grade AEC-Q101 standards for high quality and durability.

Product Description

Nexperia PESD24VL1BA,115 is a 1-element bi-directional TVS diode designed to provide transient voltage suppression of up to 200 W peak pulse power dissipation. This diode comes in a compact 2-pin UMD surface mount package, ideal for protecting electronic circuits in various industrial and automotive applications.

It offers bi-directional protection with a minimum breakdown voltage (Vbr) of 25.4 V and a maximum reverse stand-off voltage (Vwm) of 24 V, making it well suited for safeguarding sensitive components from electrostatic discharges and voltage transients.

The diode has a low maximum reverse leakage current of 50 nA and is tested with a 5 mA test current (It), providing stable and reliable operation. The clamping voltage is specified at 70 V to clamp voltage spikes effectively during transient events.

Physically, the device measures 1.8 mm in length, 1.35 mm in width, and 1.05 mm in height, allowing space-saving PCB layouts. It is rated for operation over a wide temperature range from -65°C to 150°C, meeting demanding environmental conditions.

Single-element chip configuration ensures precise and dependable ESD protection for one signal line. Automotive standard AEC-Q101 qualified, confirming suitability for automotive electronics and safety-critical systems. Designed with low capacitance characteristics to maintain signal integrity in high-speed circuitry.

This TVS diode series provides a robust transient protection solution for consumer electronics, industrial controls, telecommunications, and automotive applications. Manufactured in China, the device complies with quality and reliability requirements for modern electronics.

Explore the Electronics & Electricals Semiconductor category at EnvMart for this and other advanced TVS Diode solutions by Nexperia to meet your circuit protection needs efficiently.

Nexperia 1-Element Bi-Directional TVS Diode 200 W, 2-Pin Surface Mount UMD PESD24VL1BA,115
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Frequently Asked Questions

The peak pulse power dissipation of this TVS diode is 200 W.

The minimum breakdown voltage (Vbr) for this model is 25.4 V.

The maximum reverse stand-off voltage (Vwm) is 24 V.

The clamping voltage is specified at 70 V.

This diode measures 1.8 mm in length, 1.35 mm in width, and 1.05 mm in height.

The maximum peak pulse current rating is 3 A.

It can operate within a temperature range of -65°C to 150°C.

The maximum reverse leakage current is 50 nA.

This diode is certified to the automotive standard AEC-Q101.

This model uses a surface mount type.

The test current (It) is 5 mA.

This diode has a single element configuration per chip.

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