ROHM Type N-Channel MOSFET 400 mA, 60 V, Enhancement Mode, 3-Pin SOT-23 BSS138BKAHZGT116

The ROHM BSS138BKAHZGT116 is a high-reliability Type N-Channel MOSFET designed for compact, low-power switching applications. It comes in a surface mount SOT-23 3-pin package measuring 3 mm in length, 1.4 mm in width, and 1.1 mm in height, making it ideal for space-constrained printed circuit boards.

With a maximum continuous drain current of 400 mA and maximum drain-source voltage of 60 V, this enhancement mode MOSFET supports efficient switching performance for automotive, industrial, and consumer electronics. It features a low maximum drain-source resistance of 680 mΩ, which minimizes conduction losses.

The device is rated for operation in temperatures ranging from -55°C to 150°C and complies with the automotive AEC-Q101 standard, ensuring robustness in demanding environments. It includes an integrated ESD protection diode for enhanced durability against electrostatic discharge.

This MOSFET also provides a forward voltage of 1.2 V and can tolerate a maximum gate-source voltage of 20 V. Its maximum power dissipation is 350 mW, suitable for low power loads and switching tasks.

Applications include switching circuits, high-side load switches, relay drivers, and other load control functions requiring a reliable, compact transistor. The device’s lead plating is Pb-free and halogen-free to meet environmental standards.

This device features an enhancement mode channel for efficient switching. Maximum continuous drain current (Id) is 400 mA, suitable for low power applications. Maximum drain-source voltage (Vds) rating is 60 V for signal switching and load control.

Surface mount design with compact SOT-23 3-pin package dimensions. Maximum power dissipation is 350 mW, ensuring thermal reliability for small circuits. Automotive grade qualification with AEC-Q101 standard compliance. Forward voltage (Vf) is 1.2 V, optimizing conduction efficiency.

Operating temperature range extends from -55°C to 150°C, supporting harsh environments. Low maximum drain-source resistance (Rds) of 680 mΩ for reduced losses. Includes an internal ESD protection diode enhancing device durability.

Ideal for switching circuits, high-side load switches, and relay driver applications.

Explore more ROHM semiconductor products and similar MOSFETs in our Electronics & Electricals category to find components suited for your industrial, automotive, laboratory, or manufacturing applications.