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onsemi PNP Power Transistor TO-220, -8A, -150V, 50W, Through Hole, MJE15031G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin Czech Republic
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15031G
Width 4.83mm
Mount Type Through Hole
Series MJE15031
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -150V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 150V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc -8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Offers a high maximum collector current of -8A for robust performance.
  • Features a TO-220 package suited for through-hole mounting in circuit boards.
  • Supports a maximum collector emitter voltage of -150V for demanding power applications.
  • PNP transistor configuration allows for versatile bipolar circuit designs.
  • Provides maximum power dissipation up to 50W for efficient heat management.
  • Minimum DC current gain of 20 ensures stable amplification characteristics.
  • Wide operating temperature range from -65°C to 150°C suitable for industrial environments.
  • Three-pin configuration makes integration straightforward.

Product Description

onsemi MJE15031G is a high-performance PNP bipolar power transistor designed for demanding applications in industrial electronics and power circuits. It is housed in a robust TO-220 package for easy through-hole PCB mounting, enabling efficient thermal dissipation up to 50W and reliable operation at elevated collector currents.

This model supports a maximum DC collector current of -8A and a maximum collector emitter voltage of -150V, making it ideal for high voltage and high current switching use cases, including motor control, power amplification, and regulated power supply circuits. The single transistor configuration simplifies integration while maintaining optimal circuit reliability.

With a minimum DC current gain of 20, the MJE15031G offers consistent amplification capabilities, and its transition frequency of 30MHz supports fast switching in electronic control systems. The product is engineered for a wide thermal range from -65°C up to 150°C, ensuring stable operation across industrial, commercial, and manufacturing environments.

Physical design features include three pins for easy connection and compact dimensions of 30.02mm x 10.53mm x 4.83mm. The TO-220 package type allows efficient heat transfer and secure mechanical stability in typical PCB layouts. The device supports a maximum emitter base voltage of 5V, collector base voltage of 150V, and polarity is PNP, suitable for a variety of circuit topologies.

Applications include power amplifiers, switching circuits, motor drivers, industrial automation, and laboratory instrumentation. The MJE15031G is widely used where reliable high-power transistor performance is essential in harsh or varied environments.

High current capability makes it suitable for demanding power switching tasks. TO-220 package ensures robust mounting and effective heat dissipation. Designed for versatile industrial and laboratory applications. Reliable performance parameters support stable circuit operation.

Browse more Bipolar Transistors from onsemi and other semiconductor brands on EnvMart to find complementary devices for your design and engineering needs.

onsemi PNP Power Transistor TO-220, -8A, -150V, 50W, Through Hole, MJE15031G
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Frequently Asked Questions

The maximum collector current for this model is -8A, which allows for robust performance in high current applications.

It supports a maximum collector emitter voltage of -150V, making it suitable for demanding power applications.

This model can dissipate up to 50W, which aids in efficient heat management during operation.

The MJE15031G operates within a temperature range of -65°C to 150°C, suitable for various industrial environments.

It is housed in a TO-220 package, which is designed for through-hole mounting on circuit boards.

This transistor features a three-pin configuration, facilitating straightforward integration into circuits.

The minimum DC current gain is 20, ensuring stable amplification characteristics in applications.

The MJE15031G has a transition frequency of 30MHz, supporting fast switching in electronic control systems.

The maximum emitter base voltage is 5V, which is critical for ensuring proper operation in various circuit configurations.

It is suitable for applications such as power amplifiers, switching circuits, motor drivers, and industrial automation.

The dimensions of this model are 30.02mm in length, 10.53mm in width, and 4.83mm in height.

The MJE15031G is a PNP transistor, suitable for various circuit topologies in electronic designs.

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