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onsemi NPN Power Transistor, TO-220 Package, 10A, 80V, Through Hole, Single, D44H11G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin Czech Republic
Brand onsemi
Height 4.82mm
Length 9.28mm
Model D44H11G
Width 10.29mm
Mount Type Through Hole
Series D44H
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
ON Semi D44H11G NPN Transistor, 10 A, 80 V, 3-Pin TO-220ABBrand ON Semiconductor

Key Features

  • NPN single bipolar transistor with TO-220 package.
  • Maximum DC collector current of 10A suitable for power amplification.
  • Maximum collector-emitter voltage of 80V for robust operation in demanding applications.
  • Designed for through-hole mounting facilitating reliable PCB installation.
  • Provides maximum power dissipation of 2W, enabling efficient heat management.
  • Minimum DC current gain (hFE) of 60, ensuring high amplification performance.
  • Operating temperature range from -55°C to 150°C for industrial environments.
  • Maximum transition frequency of 50MHz useful in fast switching applications.

Product Description

The onsemi D44H11G is a high-performance NPN bipolar transistor engineered for demanding power applications in industrial and electronic systems. Featuring a TO-220 package and rated for a maximum collector current of 10A, it enables robust amplification and switching tasks where reliability and efficiency are crucial.

With a maximum collector-emitter voltage of 80V, the D44H11G transistor is designed to withstand electrical stresses, making it suitable for circuits requiring elevated voltage endurance. Its single transistor configuration allows straightforward circuit integration and reliable operation.

The TO-220 package accommodates efficient heat dissipation and facilitates secure through-hole mounting on PCBs, which is essential in environments subject to temperature variation and mechanical stresses. The device's maximum power dissipation is rated at 2W, ensuring safety during fully loaded operation.

A minimum DC current gain (hFE) of 60 provides strong amplification capability, supporting applications from signal boosting to high-power loads in electronic assemblies. The D44H11G also features a maximum emitter-base voltage of 5V, and a maximum transition frequency of 50 MHz, allowing for use in fast switching applications and other scenarios demanding quick response times.

Designed for industrial and commercial use, this transistor operates reliably in a wide temperature range from -55°C to 150°C and supports a wide spectrum of electronic devices and machinery, including power amplifiers, motor drivers, and switch-mode operations. It is not automotive qualified, but fulfills general industrial standards for discrete semiconductors.

Key dimensions are Height: 4.82mm, Length: 9.28mm, and Width: 10.29mm, facilitating integration into a variety of electronic housings. Its three-pin configuration and through-hole mount design allow for direct PCB soldering, optimizing assembly reliability in manufacturing and repair tasks.

The onsemi D44H11G transistor is a versatile power device suitable for applications in electrical power systems, industrial controls, laboratory equipment, and commercial electronics, offering reliable performance and consistent amplification across its designed operating parameters.

For further selection or related power transistor requirements, explore EnvMart's Semiconductor and Bipolar Transistor categories for comprehensive industrial offerings from leading brands.

onsemi NPN Power Transistor, TO-220 Package, 10A, 80V, Through Hole, Single, D44H11G
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Frequently Asked Questions

The maximum DC collector current for the D44H11G transistor is 10A, making it suitable for power amplification applications.

The maximum collector-emitter voltage (Vceo) of the D44H11G is 80V, allowing it to withstand significant electrical stresses in various applications.

The D44H11G has a maximum power dissipation rating of 2W, which aids in efficient heat management during operation.

This transistor operates reliably within a temperature range of -55°C to 150°C, suitable for industrial environments.

The minimum DC current gain (hFE) for the D44H11G is 60, providing strong amplification capabilities for various applications.

The D44H11G is housed in a TO-220 package, designed for efficient heat dissipation and reliable mounting on PCBs.

The dimensions of the D44H11G are: Height 4.82mm, Length 9.28mm, and Width 10.29mm.

The maximum transition frequency of the D44H11G is 50MHz, making it suitable for fast switching applications.

This model supports through-hole mounting, facilitating secure installation on printed circuit boards (PCBs).

The maximum emitter-base voltage (VEBO) for the D44H11G is 5V, which is critical for its operation in various circuits.

The D44H11G is suitable for applications such as power amplifiers, motor drivers, and switch-mode operations in industrial and commercial electronics.

The D44H11G is manufactured in the Czech Republic.

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