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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | MJE15032G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MJE15032 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
The onsemi MJE15032G is a robust NPN bipolar transistor engineered for demanding power and amplifier applications. With an 8A maximum collector current and a collector-emitter voltage rating of 250V, this transistor provides reliable operation in circuits requiring high power handling and safety margins. Its TO-220 package enables secure through-hole mounting, which is favored in industrial designs for ease of assembly and durability.
The device features high DC current gain and a minimum hFE of 10, supporting efficient signal amplification. Its high transition frequency of 30MHz makes it suitable for high-frequency driver circuits, including those used in audio amplifier stages, power control systems, and signal processing equipment. The single transistor configuration and NPN polarity facilitate straightforward integration into standard power and amplifier layouts.
With a maximum power dissipation of 2W, the MJE15032G can operate continuously under moderate loads without overheating, which extends its lifetime and maintainable reliability. Its 3-pin form factor, along with clear pin assignment, enables simple circuit implementation for designers working on both prototypes and production runs.
The transistor's wide operating temperature range, from -65°C to 150°C, and rugged TO-220 package suit industrial, laboratory, and commercial environments, including audio amplifier installations, industrial control equipment, and high-frequency power management systems. Typical applications include audio driver circuits, power amplifier stages, signal booster modules, and other electronic assemblies requiring robust high-voltage transistor elements.
The compact dimensions - height of 30.02mm, length of 10.53mm, and width of 4.83mm - ensure the component fits easily into space-constrained layouts and allows for efficient thermal management within enclosure designs. High collector base and emitter voltage ratings assure suitability in both safety-critical and performance-sensitive electrical designs.
For additional detailed specifications and best-use guidance, this transistor is standard for engineering firms, manufacturing sites, audio equipment designers, and laboratories seeking high reliability and versatile voltage/power handling. Browse the complete onsemi and Bipolar Transistor range for compatible parts and alternate configurations in EnvMart's 'Semiconductor' category.
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