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onsemi NPN Bipolar Transistor 8A, 250V, TO-220, Through Hole MJE15032G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15032G
Width 4.83mm
Mount Type Through Hole
Series MJE15032
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 250V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Offers high DC collector current up to 8A for power applications.
  • Rated for maximum collector-emitter voltage of 250V, suitable for high-voltage circuits.
  • TO-220 package with through-hole mounting for easy PCB integration.
  • Supports single transistor configuration with NPN polarity.
  • Maximum power dissipation of 2W ensures reliability under load.
  • Wide operating temperature range from -65°C to 150°C for versatile environments.
  • Minimum current gain (hFE) of 10, ideal for frequency drivers and audio amplifiers.
  • Maximum transition frequency of 30MHz allows for high-frequency driver use cases.

Product Description

The onsemi MJE15032G is a robust NPN bipolar transistor engineered for demanding power and amplifier applications. With an 8A maximum collector current and a collector-emitter voltage rating of 250V, this transistor provides reliable operation in circuits requiring high power handling and safety margins. Its TO-220 package enables secure through-hole mounting, which is favored in industrial designs for ease of assembly and durability.

The device features high DC current gain and a minimum hFE of 10, supporting efficient signal amplification. Its high transition frequency of 30MHz makes it suitable for high-frequency driver circuits, including those used in audio amplifier stages, power control systems, and signal processing equipment. The single transistor configuration and NPN polarity facilitate straightforward integration into standard power and amplifier layouts.

With a maximum power dissipation of 2W, the MJE15032G can operate continuously under moderate loads without overheating, which extends its lifetime and maintainable reliability. Its 3-pin form factor, along with clear pin assignment, enables simple circuit implementation for designers working on both prototypes and production runs.

The transistor's wide operating temperature range, from -65°C to 150°C, and rugged TO-220 package suit industrial, laboratory, and commercial environments, including audio amplifier installations, industrial control equipment, and high-frequency power management systems. Typical applications include audio driver circuits, power amplifier stages, signal booster modules, and other electronic assemblies requiring robust high-voltage transistor elements.

The compact dimensions - height of 30.02mm, length of 10.53mm, and width of 4.83mm - ensure the component fits easily into space-constrained layouts and allows for efficient thermal management within enclosure designs. High collector base and emitter voltage ratings assure suitability in both safety-critical and performance-sensitive electrical designs.

For additional detailed specifications and best-use guidance, this transistor is standard for engineering firms, manufacturing sites, audio equipment designers, and laboratories seeking high reliability and versatile voltage/power handling. Browse the complete onsemi and Bipolar Transistor range for compatible parts and alternate configurations in EnvMart's 'Semiconductor' category.

onsemi NPN Bipolar Transistor 8A, 250V, TO-220, Through Hole MJE15032G
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Frequently Asked Questions

The maximum collector current for this transistor is 8A, making it suitable for power applications.

The MJE15032G has a collector-emitter voltage rating of 250V, allowing it to be used in high-voltage circuits.

This model comes in a TO-220 package, which allows for through-hole mounting for easy PCB integration.

The MJE15032G operates within a temperature range of -65°C to 150°C, making it versatile for various environments.

The minimum current gain (hFE) for this transistor is 10, which is suitable for frequency drivers and audio amplifiers.

The maximum power dissipation of the MJE15032G is 2W, ensuring reliable operation under load.

This transistor has a maximum transition frequency of 30MHz, allowing it to be used in high-frequency driver applications.

The MJE15032G features a 3-pin configuration, facilitating straightforward circuit implementation.

The dimensions of this transistor are a height of 30.02mm and a width of 4.83mm, allowing it to fit into space-constrained layouts.

This model is an NPN bipolar transistor, suitable for single transistor configurations.

The MJE15032G is suitable for applications such as audio driver circuits, power amplifier stages, and signal processing equipment.

The maximum emitter-base voltage (VEBO) for the MJE15032G is 5V, ensuring safe operation in various circuits.

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