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onsemi PNP Power Transistor -8A, -80V, TO-252, Surface Mount, 3-Pin DPAK MJD45H11T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 8.5mm |
| Length | 6.73mm |
| Model | MJD45H11T4G |
| Width | 2.38mm |
| Mount Type | Surface |
| Series | MJD44H11 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.75W |
| Maximum DC Collector Current Idc | -8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 90MHz |
Key Features
- Delivers high collector current up to -8A for robust power handling.
- PNP configuration enables versatile circuit integration and switching applications.
- TO-252 DPAK package suited for surface mount on PCBs, enhancing assembly efficiency.
- Wide operating temperature range from -55°C to 150°C maximizes reliability in demanding environments.
- Maximum power dissipation of 1.75W supports thermal management in compact designs.
- Minimum DC current gain of 40 ensures strong amplification characteristics.
- Automotive standard compliance with AEC-Q101 for higher durability and reliability.
Product Description
The onsemi MJD45H11T4G is a power PNP bipolar transistor designed for demanding industrial, automotive, and electronic applications requiring efficient switching and amplification capabilities. Featuring a maximum DC collector current of -8A and a maximum collector emitter voltage of -80V, this device is engineered for robust power handling in surface mount circuits. Its TO-252 package, also referred to as DPAK, provides strong thermal performance and compatibility with automated PCB placement, which is essential in high-volume manufacturing.
The transistor offers a single configuration with three pins, leveraging PNP polarity to support diverse circuit arrangements. The minimum DC current gain (hFE) of 40 enables effective amplification, making it suitable for use in regulated power supplies, motor control, and other high-reliability industrial applications. The maximum power dissipation rating of 1.75W ensures dependable operation under load, while the wide operating temperature span from -55°C to 150°C helps maintain stability even in harsh environments.
Automotive standard AEC-Q101 compliance enhances reliability, supporting extended lifecycles in automotive and transportation systems. The compact form factor, with length 6.73mm, width 2.38mm, and height 8.5mm, allows for integration into densely packed electronic assemblies and space-restricted layouts. The surface-mount design supports efficient manufacturing workflows and enables rapid repairs or replacements when needed.
Additional electrical parameters include a maximum emitter base voltage of 5V, transition frequency of 90MHz, and a pin count of 3, further supporting versatility in application. This device is suitable for use in industrial controls, instrumentation, power conversion systems, and automotive electronics requiring stable switching performance, high current capacity, and compact packaging.
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Frequently Asked Questions
The maximum DC collector current for this model is -8A, allowing for robust power handling in various applications.
This transistor has a maximum collector-emitter voltage rating of -80V, making it suitable for high-voltage applications.
The operating temperature range for this model is from -55°C to 150°C, ensuring reliability in demanding environments.
It comes in a TO-252 package, also known as DPAK, which is designed for surface mount applications.
This model features a pin count of 3, supporting its single configuration design.
The minimum DC current gain (hFE) for the MJD45H11T4G is 40, providing effective amplification capabilities.
The dimensions of this model are 6.73mm in length, 2.38mm in width, and 8.5mm in height.
This transistor has a maximum power dissipation rating of 1.75W, which helps in thermal management during operation.
It complies with the AEC-Q101 automotive standard, enhancing its reliability for automotive applications.
The maximum transition frequency for this model is 90MHz, supporting its use in high-frequency applications.
The MJD45H11T4G features a single configuration with PNP polarity, suitable for various circuit arrangements.
The maximum emitter-base voltage (VEBO) for this device is 5V, which is important for its operational integrity.
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