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onsemi NPN Power Transistor 15A, 200V, TO-3BPL, Through Hole MJL3281AG

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 47.8mm
Length 20.3mm
Model MJL3281AG
Width 5.3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-3BPL
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 200V
Minimum DC Current Gain hFE 45
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 230V
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc 15A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Features high maximum collector current rating of 15A for demanding power applications.
  • Supports up to 200V collector-emitter voltage, suitable for high-voltage circuits.
  • TO-3BPL package offers robust mechanical stability and efficient heat dissipation.
  • NPN transistor configuration ideal for use in amplification, switching and audio power stages.
  • Through hole mount design for secure PCB installation.
  • Maximum power dissipation of 200W enables use in high power systems.
  • Minimum DC current gain of 45 ensures reliable amplification performance.
  • Maximum transition frequency of 30MHz, suitable for medium-high frequency signal processing.

Product Description

The onsemi MJL3281AG is a high-performance NPN bipolar power transistor engineered for demanding industrial and electronic applications. This device supports a maximum collector current of 15A and collector-emitter voltage of up to 200V, making it ideal for high-voltage switching, audio amplification and other power management tasks.

Built with a TO-3BPL package, the MJL3281AG ensures robust mechanical integrity and superior thermal characteristics, allowing for efficient heat dissipation under heavy load conditions. Its through-hole mounting configuration supports reliable integration into printed circuit boards, offering secure installation and ease of service.

The transistor features an NPN polarity and is configured as a single device, simplifying implementation in a wide range of circuit designs. The MJL3281AG delivers a maximum power dissipation of 200W, enabling usage in high-power amplifier stages and industrial switching environments. It boasts a minimum DC current gain (hFE) of 45, which supports reliable signal amplification and assures consistent performance in sensitive applications.

Supporting a maximum transition frequency (ft) of 30MHz, this transistor is well suited for medium-to-high frequency signal processing and active power control circuits. Additional specifications include a maximum collector-base voltage (VCBO) of 230V, maximum emitter-base voltage (VEBO) of 7V, and a temperature operation range from -65°C to 150°C, ensuring durability across a variety of industrial environments.

With a 3-pin configuration, the MJL3281AG is engineered to comply with contemporary PCB layouts and assembly practices. Its compact package dimensions - height 47.8mm, length 20.3mm, and width 5.3mm - facilitate integration in space-constrained designs.

Common applications for the MJL3281AG include industrial control systems, power amplifiers, electric motor drivers, and voltage regulation circuits. Its features make it particularly suitable for audio amplification stages (such as high-fidelity amplifiers), precision switching, and power distribution modules in electronic manufacturing.

For engineers seeking a reliable, high-current NPN power transistor with excellent voltage and power handling, the onsemi MJL3281AG represents a trusted solution compatible with demanding commercial, laboratory, and industrial electronics sectors.

Browse more power transistors and semiconductor devices in the Bipolar Transistor category from onsemi and other leading brands at EnvMart.

onsemi NPN Power Transistor 15A, 200V, TO-3BPL, Through Hole MJL3281AG
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Frequently Asked Questions

The MJL3281AG has a maximum collector current rating of 15A, making it suitable for demanding power applications.

This model supports a maximum collector-emitter voltage of 200V, suitable for high-voltage circuits.

The MJL3281AG comes in a TO-3BPL package, which offers robust mechanical stability and efficient heat dissipation.

It has a maximum power dissipation of 200W, enabling its use in high power systems.

The minimum DC current gain (hFE) for this transistor is 45, ensuring reliable amplification performance.

The maximum transition frequency of this model is 30MHz, making it suitable for medium-to-high frequency signal processing.

This model has dimensions of 47.8mm in height, 20.3mm in length, and 5.3mm in width.

The operating temperature range for this transistor is from -65°C to 150°C, ensuring durability across various environments.

It supports through-hole mounting, allowing for secure installation on printed circuit boards.

Common applications include industrial control systems, power amplifiers, electric motor drivers, and voltage regulation circuits.

This model is configured as a single NPN transistor, simplifying implementation in various circuit designs.

The maximum collector-base voltage (VCBO) for this transistor is 230V, allowing for use in high-voltage applications.

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