Nexperia Darlington Transistor PNP 1 A 80 V 1000 hFE 3-Pin SOT-89 BST62,115

Nexperia BST62,115 Darlington Transistor PNP offers reliable performance in discrete semiconductor applications for electronic circuit design. It features a maximum continuous collector current of 1 A and a collector-emitter voltage rating of 80 V, making it suitable for various low to medium power electronic circuits.

This transistor employs a Darlington pair configuration for high current gain with a minimum DC current gain (hFE) of 1000, ensuring amplified signal capability. It is housed in a surface mount 3-pin SOT-89 package which optimizes board space usage and enhances thermal management with a maximum power dissipation of 1.3 W.

The device is designed to operate reliably across a wide temperature range from -65°C to 150°C, suitable for industrial and consumer electronics. It supports a maximum emitter-base voltage of -5 V and a collector-emitter saturation voltage of -1.3 V, ensuring efficient switching characteristics in transistor applications.

Nexperia’s BST62,115 transistor is a single-element PNP Darlington transistor without automotive certifications. Typical applications include signal amplification, switching in power electronics, and other semiconductor discrete components usage in industrial electronics, power supplies, and control systems.

Maximum continuous collector current: 1 A. Maximum collector-emitter voltage: 80 V. Minimum DC current gain (hFE): 1000. Package: 3-pin SOT-89 surface mount. Maximum power dissipation: 1.3 W. Operating temperature range: -65°C to 150°C.

Maximum emitter-base voltage: -5 V. Collector-emitter saturation voltage: -1.3 V. No automotive standard certification. This transistor is ideal for industrial, laboratory, and consumer electronics requiring efficient switching and amplification.

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