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Nexperia Darlington Transistor NPN 1 A 80 V 1000 hFE 4-Pin SOT-223 BSP52,115
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | BSP52,115 |
| Mount Type | Surface |
| Series | BSP52 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 1A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V |
| Maximum Collector Base Voltage VCBO | 90V |
| Maximum Collector Cut-off Current | 0.00005mA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.25W |
| onsemi BSP52T1G 1 Darlington Transistor NPN, 1 A 80 V HFE | 1000, 4-Pin SOT-223Brand: onsemi |
| Nexperia BSP52,115 1 Darlington Transistor NPN, 1 A 80 V HFE | 1000, 4-Pin SOT-223 |
Key Features
- This transistor features a minimum DC current gain (hFE) of 1000.
- Equipped with NPN polarity for standard transistor applications.
- Offers maximum power dissipation of 1.25W suitable for moderate power circuits.
- Designed for surface mounting with a compact 6.7mm length and 1.7mm height.
- Operates reliably in temperatures ranging from -65°C to 150°C.
- Has a maximum collector-emitter saturation voltage of 1.3V ensuring efficient switching.
- Compatible with automotive applications following AEC-Q101 standard.
- Maximum collector base voltage rated at 90V providing robust electrical insulation.
Product Description
Nexperia BSP52,115 is a precision Darlington transistor designed for use in electronic circuits requiring high current gain and efficient switching.
This bipolar NPN transistor supports a maximum continuous collector current of 1 A and withstands collector-emitter voltages up to 80 V, making it suitable for medium power applications including automotive and industrial electronics.
The device is housed in a compact 4-Pin SOT-223 surface-mount package with dimensions of 6.7mm length and 1.7mm height, enabling a small footprint on printed circuit boards.
With a minimum DC current gain (hFE) of 1000, it ensures amplification performance ideal for signal modulation and switching applications. The maximum power dissipation of 1.25W and maximum collector-emitter saturation voltage of 1.3V contribute to energy efficiency and thermal reliability under operation.
This transistor is specified to operate reliably across a wide temperature range from -65°C to 150°C, fitting harsh environmental and automotive standards such as AEC-Q101, ensuring durability and longevity in demanding conditions.
This transistor features a minimum DC current gain (hFE) of 1000. Equipped with NPN polarity for standard transistor applications. Offers maximum power dissipation of 1.25W suitable for moderate power circuits. Designed for surface mounting with a compact 6.7mm length and 1.7mm height.
Operates reliably in temperatures ranging from -65°C to 150°C. Has a maximum collector-emitter saturation voltage of 1.3V ensuring efficient switching. Compatible with automotive applications following AEC-Q101 standard.
Maximum collector base voltage rated at 90V providing robust electrical insulation. Comes from Nexperia’s BSP52 series manufactured in China. This Darlington Transistor is ideal for industrial, automotive, and general electronic applications requiring robust performance and efficient power handling.
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Frequently Asked Questions
The maximum continuous collector current for this model is 1 A.
It operates reliably in temperatures ranging from -65°C to 150°C.
The minimum DC current gain (hFE) is 1000.
The maximum collector-emitter voltage (Vceo) is rated at 80 V.
This model has a maximum power dissipation of 1.25 W.
It is housed in a compact 4-Pin SOT-223 surface-mount package.
The maximum collector-emitter saturation voltage (VceSAT) is 1.3 V.
Yes, it is compatible with automotive applications following the AEC-Q101 standard.
The dimensions are 6.7 mm in length and 1.7 mm in height.
The maximum collector base voltage (VCBO) is rated at 90 V.
The transistor polarity is NPN.
The maximum emitter-base voltage (VEBO) is 5 V.
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