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TDK 15 pF Multilayer Ceramic Capacitor 100V dc ±5% Tolerance Surface Mount CGA3E2NP02A150J080AA

Category Multilayer Ceramic Capacitor Brand TDK Condition New

Specifications

Country of Origin China
Voltage 100V dc
Brand TDK
Height 0.8mm
Length 1.6mm
Model CGA3E2NP02A150J080AA
Packaging Tape & Reel
Width 0.8mm
Mount Type Surface
Series CGA
Termination Type Surface Mount
Maximum Operating Temperature 150°C
Tolerance ±5 %
Capacitance 15pF
Minimum Operating Temperature -55°C
Package/Case 0603
Dielectric C0G
Automotive Standard AEC-Q200
Suppression Class Class I

Key Features

  • Features a 0603 package size with dimensions 1.6mm x 0.8mm x 0.8mm.
  • Constructed with C0G dielectric for excellent stability and low loss.
  • Rated for maximum operating temperature of 150°C and minimum -55°C.
  • Complies with Automotive Standard AEC-Q200 ensuring high reliability.
  • Suitable for automotive high-temperature environments including engine rooms.
  • Offers excellent DC bias properties and capacitance stability.
  • Designed for peripheral circuits of IGDT, SiC, GaN used at high temperatures.
  • Ideal for sensor modules, smoothing, and decoupling applications.

Product Description

TDK CGA3E2NP02A150J080AA is a high-quality multilayer ceramic capacitor with a capacitance of 15 pF and a voltage rating of 100V DC, designed for surface mount applications.

This capacitor is housed in a 0603 package with length 1.6mm, width 0.8mm, and height 0.8mm, featuring a stable C0G dielectric material known for its excellent temperature and voltage stability characteristics.

Operating reliably in temperatures ranging from -55°C to 150°C, this component meets the stringent automotive standard AEC-Q200, making it well-suited for demanding environments such as automotive engine rooms where high temperature tolerance is required.

The capacitor's excellent DC bias properties ensure stable capacitance under voltage stress, making it ideal for use in peripheral circuits employing advanced materials like IGDT, Silicon Carbide (SiC), and Gallium Nitride (GaN) transistors which operate in high-temperature settings.

Typical applications include sensor modules, smoothing circuits, and decoupling for various devices exposed to elevated temperatures. This capacitor is delivered in tape and reel for efficient automated assembly processes.

Features a 0603 package size with dimensions 1.6mm x 0.8mm x 0.8mm. Constructed with C0G dielectric for excellent stability and low loss. Rated for maximum operating temperature of 150°C and minimum -55°C. Complies with Automotive Standard AEC-Q200 ensuring high reliability.

Suitable for automotive high-temperature environments including engine rooms. Offers excellent DC bias properties and capacitance stability. Designed for peripheral circuits of IGDT, SiC, GaN used at high temperatures. Ideal for sensor modules, smoothing, and decoupling applications.

This TDK multilayer ceramic capacitor combines performance and reliability, designed to meet the needs of modern automotive and industrial electronic applications. Explore the wide range of Multilayer Ceramic Capacitors on EnvMart for industrial electronics and electronic component needs.

TDK 15 pF Multilayer Ceramic Capacitor 100V dc ±5% Tolerance Surface Mount CGA3E2NP02A150J080AA
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Frequently Asked Questions

This model has a capacitance of 15 pF.

It is rated for a maximum voltage of 100V DC.

The dimensions of the package are 1.6mm in length, 0.8mm in width, and 0.8mm in height.

It operates reliably in temperatures ranging from -55°C to 150°C.

It is constructed with C0G dielectric, known for its excellent stability and low loss.

Yes, it complies with Automotive Standard AEC-Q200, ensuring high reliability.

This capacitor is designed for surface mounting.

It is delivered in tape and reel packaging for efficient automated assembly.

It is ideal for sensor modules, smoothing circuits, and decoupling applications in high-temperature environments.

It has a tolerance of ±5%.

This capacitor is classified as Class I suppression.

It is designed for use in peripheral circuits employing IGDT, SiC, and GaN transistors.

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