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Semtech 2-Element Bi-Directional TVS Diode, 400 W, 3-Pin SOT-23 SM712.TCT

Category TVS Diode Brand Semtech Condition New

Specifications

Country of Origin China
Brand Semtech
Height 0.95mm
Length 2.9mm
Model SM712.TCT
Width 1.3mm
Mount Type Surface
Series SM712
Maximum Operating Temperature 125°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Number of Elements per Chip 2
Clamping Voltage VC 26V
Diode Configuration Series
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 13.3V
Maximum Reverse Stand-off Voltage Vwm 12V
Peak Pulse Power Dissipation Pppm 400W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 17A
Maximum Reverse Leakage Current 20μA

Key Features

  • Bi-directional diode configuration for symmetrical protection.
  • Low capacitance ensures minimal impact on signal integrity.
  • Surface mount type suited for efficient PCB design.
  • Protects against ESD, EFT, and lightning transients up to specified limits.
  • Operates reliably between -55°C to 125°C.
  • Clamping voltage of 26 V with a peak pulse current rating of 17 A.
  • Consists of two elements per chip for extended common-mode RS-485 protection.
  • Manufactured with solid-state silicon avalanche technology for enhanced durability.

Product Description

Semtech SM712.TCT is a 2-Element Bi-Directional TVS Diode with a peak pulse power dissipation of 400 W designed for transient voltage suppression in electronics systems. This diode features a 3-pin SOT-23 surface mount package, optimized for space-saving PCB layouts.

It provides bi-directional protection suitable for asymmetrical data lines, ideal for extended common-mode RS-485 interfaces. The device protects against Electrostatic Discharge (ESD) up to ±15 kV (air) and ±8 kV (contact), Electrical Fast Transient (EFT) pulses up to 40 A, and lightning surges up to 12 A.

With a minimum breakdown voltage of 13.3 V and maximum reverse stand-off voltage of 12 V, it ensures device reliability through low capacitance and solid-state silicon avalanche technology. The clamping voltage is rated at 26 V, limiting voltage spikes effectively during transient events.

This TVS diode operates in a wide temperature range from -55°C to 125°C, making it suitable for harsh environments. Its compact dimensions of 2.9 mm length, 1.3 mm width, and 0.95 mm height, and 3-pin configuration enable easy integration into modern electronic devices.

Common use cases include protection in industrial automation electronics, telecommunication equipment, automotive electronics, and other commercial electronic devices that require robust surge suppression and ESD protection.

Bi-directional diode for symmetrical transient voltage protection. 400 W peak pulse power with a maximum peak pulse current of 17 A. Low capacitance for minimal signal interference. Surface mount 3-pin SOT-23 package. Wide operating temperature range of -55°C to 125°C.

Compact size for efficient PCB design. Meets transient protection standards including IEC 61000-4-2, IEC 61000-4-4, and IEC 61000-4-5.

Set your projects up for success with Semtech’s reliable SM712.TCT transient voltage suppressor diode. Explore more in the TVS Diode category on EnvMart for enhanced protection solutions.

Semtech 2-Element Bi-Directional TVS Diode, 400 W, 3-Pin SOT-23 SM712.TCT
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Frequently Asked Questions

The SM712.TCT has a peak pulse power dissipation of 400 W.

The clamping voltage for this model is rated at 26 V.

This diode has a maximum peak pulse current rating of 17 A.

It operates reliably between -55°C to 125°C.

The dimensions are 2.9 mm in length, 1.3 mm in width, and 0.95 mm in height.

It comes in a 3-pin SOT-23 surface mount package.

The minimum breakdown voltage is 13.3 V.

It protects against Electrostatic Discharge (ESD), Electrical Fast Transient (EFT) pulses, and lightning surges.

This model consists of two elements per chip.

The maximum reverse stand-off voltage is 12 V.

It is suitable for protection in industrial automation electronics, telecommunication equipment, and automotive electronics.

It is manufactured with solid-state silicon avalanche technology.

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