onsemi Digital Transistor 50 V NPN 100 mA Surface Mount SOT-346 (SC-59) 3-Pin MUN2212T1G

onsemi MUN2212T1G digital transistor is a precision-engineered discrete semiconductor component designed primarily for surface mount applications in electronic circuits. It is housed in a compact SOT-346 (SC-59) package, enabling efficient board space utilization for modern assemblies.

This transistor is designed with a maximum collector emitter voltage of 50 V and a maximum continuous collector current of 100 mA, making it suitable for low power digital switching and amplification tasks. Featuring a minimum DC current gain (hFE) of 60, it ensures reliable transistor operation under diverse electrical loads.

The device exhibits a maximum power dissipation rating of 338 mW and a low collector emitter saturation voltage of 0.25 V, contributing to minimal power losses and improved efficiency. It is rated for continuous operation up to 150°C, supporting use in demanding industrial or automotive environments.

With its configuration as a single NPN digital transistor featuring integrated bias resistors, the MUN2212T1G simplifies circuit design by allowing direct drive from digital sources without additional resistors. The device meets RoHS compliance and conforms to the automotive AEC-Q101 standard, ensuring quality and environmental safety.

The compact 3-pin form factor and precise dimensions (2.9 mm length, 1.5 mm width, 1.09 mm height) facilitate easy integration into tight PCB layouts. Its surface mount design assists automated assembly processes enhancing production efficiency.

Industrial applications include automotive electronics, consumer devices, communication equipment, and other low power switching circuits. It is suited for laboratory, manufacturing, and repair environments requiring reliable bipolar digital transistors.

Maximum collector emitter voltage rated at 50 V ensuring reliable operation. Supports maximum continuous collector current of 100 mA for low power needs. Package type SOT-346 (SC-59) surface mount provides compact integration.

Minimum DC current gain (hFE) of 60 for efficient transistor operation. Maximum power dissipation of 338 mW to ensure thermal reliability. Maximum collector emitter saturation voltage of 0.25 V to minimize energy loss. Designed for operating temperatures up to 150°C suitable for demanding environments.

Equipped with 3 pins and configured as a single transistor with NPN polarity. Complies with RoHS standards and automotive standard AEC-Q101 for quality and reliability. Compact dimensions of 2.9 mm length, 1.5 mm width, and 1.09 mm height optimize PCB space.

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