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STMicroelectronics MOSFET Gate Driver 2 Outputs 3.5A 8-Pin SOIC 40-55V VNS1NV04DPTR-E
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.5mm |
| Length | 5mm |
| Model | VNS1NV04DPTR-E |
| Width | 4mm |
| Mount Type | Surface |
| Series | OMNIFET |
| Output Current | 3.5A |
| Package Type | SOIC |
| Number of outputs | 2 |
| Rise Time | 500ns |
| Standards/Approvals | 2002/95/EC European Directive |
| Pin Count | 8 |
| Maximum Supply Voltage | 55V |
| Minimum Supply Voltage | 40V |
| Number of Drivers | 2 |
| Fall Time | 600ns |
| Driver Type | MOSFET |
Key Features
- Features fully auto-protected OMNIFET technology enhancing ruggedness and reliability.
- Equipped with linear current limitation and thermal shutdown for safety.
- Short circuit and electrostatic discharge protections are integrated.
- Designed for inductive and resistive loads, especially in automotive environments.
- Compact dimensions enable easy surface mounting on PCBs.
- Rise time of 500 ns and fall time of 600 ns for efficient switching.
- Compliance with 2002/95/EC European Directive standards ensures environmental safety.
- 2 driver outputs support versatile power management applications.
Product Description
STMicroelectronics VNS1NV04DPTR-E is a MOSFET gate driver designed for intelligent power switching with 2 driver outputs, supporting an output current of 3.5 A and operating voltage from 40 V up to 55 V. Packaged in a compact 8-pin SOIC for surface mounting, it facilitates integration into electronic circuits.
This device is part of the OMNIFET series known for fully auto-protected power MOSFET technology, focusing on enhanced ruggedness and reliability in high-demand environments. The gate driver includes features vital for robust operation, such as linear current limitation that prevents excessive current during switching, thermal shutdown to protect against overheating, and short circuit protection improving device longevity.
Moreover, the integrated electrostatic discharge (ESD) protection and clamp circuits ensure operation stability in noisy electrical environments.
The driver exhibits fast switching characteristics with a rise time of 500 nanoseconds and a fall time of 600 nanoseconds, optimizing response in power management and control applications. The product is compliant with the 2002/95/EC European Directive, underlining adherence to environmental safety standards.
Its typical use cases include automotive applications, industrial electronics, and power management IC circuits requiring reliable and efficient MOSFET switching capabilities. Fully auto-protected low-side MOSFET driver with OMNIFET technology.
Linear current limitation enhances device safety during switching operations. Thermal shutdown and short circuit protections increase reliability. Integrated ESD protection and clamp for electrical robustness. Fast rise and fall times enable responsive power control.
Surface mount 8-pin SOIC package for compact PCB integration. Meets 2002/95/EC European environmental directive compliance. Ideal for automotive and industrial power switching applications.
This STMicroelectronics product category encompasses Power Management ICs, specifically MOSFET gate drivers designed for electronic component integration in demanding environments. For more power management components and Gate Drivers, explore the Electronics & Electricals section at EnvMart.
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Frequently Asked Questions
This model supports an output current of 3.5 A, making it suitable for various power management applications.
The VNS1NV04DPTR-E operates within a voltage range of 40 V to 55 V.
It has a rise time of 500 nanoseconds and a fall time of 600 nanoseconds, which contributes to efficient switching performance.
This model features 2 driver outputs, allowing for versatile power management applications.
The VNS1NV04DPTR-E is packaged in an 8-pin SOIC format, designed for surface mounting on PCBs.
It includes thermal shutdown, short circuit protection, and electrostatic discharge (ESD) protection to enhance safety and reliability during operation.
The dimensions of the VNS1NV04DPTR-E are 1.5 mm in height, 5 mm in length, and 4 mm in width.
Yes, it complies with the 2002/95/EC European Directive, ensuring adherence to environmental safety standards.
This gate driver is part of the OMNIFET series, which is known for its fully auto-protected power MOSFET technology.
It is designed for both inductive and resistive loads, making it suitable for applications in automotive environments.
This model is intended for surface mounting, facilitating easy integration into electronic circuits.
It is suitable for automotive applications, industrial electronics, and power management IC circuits requiring reliable MOSFET switching.
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