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onsemi Digital Transistor NPN 50 V 100 mA Surface Mount 3-Pin DTC114EET1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.9mm
Length 1.65mm
Model DTC114EET1G
Width 1.7mm
Mount Type Surface
Series DTC114EE
Maximum Operating Temperature 150°C
Standards/Approvals RoHS, Pb-Free
Pin Count 3
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 50V
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 338mW
Transistor Configuration Single

Key Features

  • Maximum collector emitter voltage is rated at 50 V for reliable operation.
  • Collector current continuous limit of 100 mA ensures efficient switching.
  • Compact surface mount 3-pin package suitable for automated board assembly.
  • Integrated resistors enable direct digital input drive without external bias components.
  • Thermal dissipation capacity of 338 mW supports moderate power applications.
  • High maximum operating temperature of 150°C allows use in demanding environments.
  • Low collector emitter saturation voltage of 0.25 V enhances switching efficiency.
  • Compliant with RoHS and Pb-Free standards for environmental safety.

Product Description

onsemi DTC114EET1G digital transistor is a high-performance NPN bipolar transistor with integrated bias resistors designed for digital switching applications. It supports a maximum collector emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Its 3-pin surface mount package facilitates automated PCB assembly, reducing manufacturing complexity and improving circuit density.

This device contains built-in resistors, enabling it to be driven directly from digital logic signals without requiring additional external biasing components, simplifying design and reducing component count. The maximum power dissipation rating of 338 mW supports reliable switching under moderate load conditions.

The transistor's low collector emitter saturation voltage (VceSAT) of 0.25 V contributes to efficient switching and low power losses. It can operate at elevated temperatures up to 150°C, making it suitable for harsh industrial and automotive environments. onsemi’s automotive qualification under the AEC-Q101 standard further assures its reliability in automotive electronic systems.

The component adheres to RoHS and Pb-Free standards, aligning with environmental regulations for sustainable manufacturing. Its compact dimensions (1.65 mm length, 1.7 mm width, 0.9 mm height) help minimize PCB real estate usage, catering to space-constrained designs in consumer electronics, industrial automation, and automotive control modules.

Typical applications include digital interface circuits, signal amplification, and switching tasks in industrial, automotive, and consumer electronics sectors. This transistor series is ideal for engineers designing energy-efficient and compact digital switching circuits.

Maximum collector emitter voltage is rated at 50 V for reliable operation. Collector current continuous limit of 100 mA ensures efficient switching. Compact surface mount 3-pin package suitable for automated board assembly.

Integrated resistors enable direct digital input drive without external bias components. Thermal dissipation capacity of 338 mW supports moderate power applications. High maximum operating temperature of 150°C allows use in demanding environments.

Low collector emitter saturation voltage of 0.25 V enhances switching efficiency. Compliant with RoHS and Pb-Free standards for environmental safety. AEC-Q101 automotive qualification ensures high reliability in automotive applications.

Dimensions are compact with length 1.65 mm, width 1.7 mm and height 0.9 mm.

Explore more Digital Transistor options at EnvMart to find parts tailored for your industrial and automotive needs. Benefit from trusted brands and technical specifications from our extensive semiconductor catalog.

onsemi Digital Transistor NPN 50 V 100 mA Surface Mount 3-Pin DTC114EET1G
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is rated at 50 V, ensuring reliable operation in various applications.

This digital transistor has a continuous collector current (Ic) limit of 100 mA, which supports efficient switching capabilities.

The dimensions of this model are 1.65 mm in length, 1.7 mm in width, and 0.9 mm in height, making it compact for space-constrained designs.

The maximum power dissipation rating for this transistor is 338 mW, suitable for moderate power applications.

It can operate at a maximum temperature of 150°C, allowing use in demanding environments.

Yes, it is compliant with RoHS and Pb-Free standards, aligning with environmental regulations for sustainable manufacturing.

This model is an NPN bipolar digital transistor, designed for digital switching applications.

The low collector emitter saturation voltage (VceSAT) of this model is 0.25 V, which enhances switching efficiency.

It meets the AEC-Q101 automotive standard, ensuring reliability in automotive electronic systems.

This transistor features a 3-pin configuration, suitable for surface mount applications.

Typical applications for this model include digital interface circuits, signal amplification, and switching tasks in industrial, automotive, and consumer electronics sectors.

The minimum DC current gain (hFE) for the DTC114EET1G is 35, which supports its performance in switching applications.

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