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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.5mm |
| Length | 1.2mm |
| Model | ESDR0502NMUTBG |
| Width | 1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | UDFN-1210 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 6 |
| Number of Elements per Chip | 4 |
| Diode Configuration | Complex Array |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 6V |
| Maximum Reverse Stand-off Voltage Vwm | 5.5V |
| Peak Pulse Power Dissipation Pppm | 100W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 3A |
| Maximum Reverse Leakage Current | 1μA |
onsemi ESDR0502NMUTBG is a 4-Element uni-directional Electrostatic Discharge (ESD) protection array specifically designed for transient voltage suppression in sensitive electronic semiconductor applications. Featuring a complex diode array configuration, this device protects delicate components from damaging ESD events and transient voltage spikes with a peak pulse power dissipation of 100 W.
The component comes in a compact surface mount 6-pin UDFN-1210 package measuring 1.2 mm in length, 1.0 mm in width, and 0.5 mm in height, facilitating high-density PCB layouts without sacrificing protection performance. It operates over a wide ambient temperature range from -40°C to 125°C, ensuring reliable performance in both automotive and industrial electronics environments.
This protection array has a minimum breakdown voltage of 6 V and a maximum reverse stand-off voltage of 5.5 V, optimized for efficient ESD clamping. The device supports a peak pulse current of up to 3 A and maintains a very low maximum reverse leakage current of 1 μA, reducing power losses and improving circuit efficiency.
Its uni-directional diode orientation suits protection scenarios where transient voltages can occur in a single polarity direction, delivering precise and fast response to transient voltage phenomena. This array is widely used in electronic components, power connectors, telecommunications equipment, and semiconductor devices requiring robust ESD mitigation.
Designed for transient voltage suppression in electronic circuits. Uni-directional diode configuration ensures reliable ESD protection. Compact 1.2 mm length, 1.0 mm width, and 0.5 mm height footprint. Operates reliably from -40°C to 125°C ambient temperature range.
Supports a peak pulse current of 3 A for transient events. Minimum breakdown voltage of 6 V and maximum reverse stand-off voltage of 5.5 V. Low leakage current of 1 μA ensures minimal power loss in circuits. Ideal for use in sensitive electronic and semiconductor devices for ESD mitigation.
Package type UDFN-1210 enables surface mounting in compact PCB designs.
This product is suitable for industrial, automotive, telecommunications, and semiconductor manufacturing applications where sensitive components require effective Electrostatic Discharge protection to improve device longevity and operational stability. Explore more onsemi semiconductor components and protection solutions at EnvMart.
Explore more products in our ESD Protection Array category.
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