onsemi MUN2212T1G digital transistor is a robust NPN bipolar transistor featuring integrated resistor technology, commonly referred to as a digital or bias resistor transistor. Packaged in the compact SOT-346 (SC-59) surface mount case, this device offers efficient direct digital drive capability, simplifying interface with digital control circuits.
Designed to handle a maximum collector-emitter voltage of 50 V and continuous collector current of 100 mA, the MUN2212T1G ensures reliable performance in various electronic circuits. It delivers a minimum DC current gain (hFE) of 60, allowing effective amplification functionality, while dissipating a maximum power of 338 mW. Its maximum collector-emitter saturation voltage is only 0.25 V, thus minimizing conduction losses in switching applications.
The transistor's physical dimensions - 2.9 mm length, 1.5 mm width, and 1.09 mm height - make it ideal for use in compact and dense electronic assemblies. Operating temperature can reach up to 150°C, catering to demanding industrial and automotive environments. The device conforms to the RoHS directive and meets the AEC-Q101 automotive quality standard, ensuring extended reliability and compliance.
Applications include industrial control systems, digital switching circuits, signal processing, automotive electronics, and other commercial electronics where surface mount components with integrated resistors are advantageous. Its single-transistor configuration simplifies circuit design, while the dual or single resistor integration facilitates easy interface with logic-level inputs.
Package contents include one onsemi MUN2212T1G digital transistor in SOT-346 format. This device is a trusted component for engineers seeking a high-quality digital transistor for discrete semiconductor solutions. Explore more semiconductor components in the EnvMart Electronics & Electricals category for comprehensive procurement needs.
Dual resistor digital NPN transistor suited for direct digital input drive. Maximum collector-emitter voltage rating of 50 volts for robust operation. Minimum DC current gain of 60 ensuring reliable amplification. Maximum power dissipation of 338 milliwatts for efficient thermal management.
Compact dimensions: length 2.9 mm, width 1.5 mm, height 1.09 mm. Complies with RoHS and automotive AEC-Q101 standards for quality and safety. Maximum operating temperature up to 150°C suitable for industrial applications.
Single transistor configuration implemented in a space-saving surface mount package. Maximum collector-emitter saturation voltage of 0.25 V for low voltage drop. Pin count: 3 enabling standard connection configurations.
This onsemi Digital Transistor is a reliable choice for industrial, automotive, and commercial electronic designs. For more advanced components, browse the extensive EnvMart catalog focused on semiconductors and discrete transistors.
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