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Nexperia PNP Darlington Transistor 3-Pin SOT-23, -500 mA, 60 V, HFE 2000 BCV46215 BCV46,215

Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BCV46,215
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic -500mA
Maximum Collector Emitter Voltage Vceo 60V
Number of Elements per Chip 2
Minimum DC Current Gain hFE 2000
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -10V
Maximum Collector Emitter Saturation Voltage VceSAT 1V
Maximum Collector Base Voltage VCBO -80V
Maximum Collector Cut-off Current -100nA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Nexperia 2 Darlington Transistor PNP, -500 mA 60 V HFE 2000, 3-Pin SOT-23

Key Features

  • High DC current gain of 2000 ensures efficient amplification.
  • Low saturation voltage of 1 V reduces power losses during conduction.
  • Compact small form factor with 1 mm height and 3 mm length.
  • Wide operating temperature range from -65°C to 150°C for reliable performance.
  • Complies with automotive standard AEC-Q101 for use in demanding environments.
  • Maximum power dissipation rating of 250 mW supports moderate power applications.
  • Features two transistor elements in a single chip for Darlington configuration.
  • Optimized for PCB surface mount technology with SOT-23 packaging.

Product Description

Nexperia BCV46,215 is a PNP Darlington transistor designed to provide high current gain and reliable switching performance in a compact 3-pin surface mount SOT-23 package. Rated for a maximum continuous collector current of -500 mA and a collector-emitter voltage of 60 V, it is suitable for various electronic applications where efficient amplification is required.

This transistor features a minimum DC current gain (hFE) of 2000, which allows for significant amplification of input signals. The maximum power dissipation is 250 mW, and the device operates efficiently with a collector-emitter saturation voltage of only 1 V, minimizing power losses.

The BCV46,215 supports a wide operating temperature range from -65°C up to 150°C, making it suitable for industrial and automotive environments. It also complies with the rigorous automotive qualification standard AEC-Q101, ensuring durability and reliability under harsh conditions.

The device package dimensions are compact with a height of 1 mm and length of 3 mm, facilitating use in space-constrained PCB layouts. It contains two interconnected transistor elements in one chip for Darlington configuration, enabling higher gain in a single component.

Additional electrical parameters include a maximum emitter-base voltage of -10 V, a maximum collector-base voltage of -80 V, and a very low maximum collector cutoff current of -100 nA. These characteristics are ideal for precision amplification and switching roles in circuits.

High DC current gain of 2000 ensures efficient amplification. Low saturation voltage minimizes power dissipation. Compact SOT-23 package supports surface mounting. Wide temperature range of -65°C to 150°C for dependable performance.

Compliance with automotive standard AEC-Q101. Maximum power dissipation of 250 mW for moderate load applications. Darlington configuration with two transistor elements per chip. Suitable for industrial, automotive, consumer electronics, and general electronics use.

Low leakage current enhances circuit performance.

This product is ideal for use in amplification, switching, and signal processing within various electronic systems in industrial, automotive, laboratory, and commercial settings. The SOT-23 package ensures compatibility with modern surface mount PCB assembly processes.

EnvMart offers this reliable Nexperia Darlington Transistor for professional and industrial applications requiring a compact, high-gain PNP transistor solution. Explore similar discrete semiconductor components in the Electronics & Electricals category for enhanced circuit design options.

Nexperia PNP Darlington Transistor 3-Pin SOT-23, -500 mA, 60 V, HFE 2000 BCV46215 BCV46,215
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Frequently Asked Questions

The maximum continuous collector current for this model is -500 mA.

This transistor has a minimum DC current gain (hFE) of 2000, allowing for efficient amplification of input signals.

The maximum collector-emitter voltage for this unit is 60 V.

The maximum power dissipation rating is 250 mW, suitable for moderate power applications.

The dimensions of the SOT-23 package are 1 mm in height and 3 mm in length.

It operates within a wide temperature range from -65°C to 150°C.

This transistor complies with the automotive standard AEC-Q101, ensuring reliability in demanding environments.

The maximum collector-base voltage is -80 V.

This model contains two interconnected transistor elements per chip for Darlington configuration.

The maximum emitter-base voltage for this transistor is -10 V.

The maximum collector-emitter saturation voltage is 1 V, which helps minimize power losses during conduction.

This model is designed for surface mounting with a SOT-23 package.

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