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onsemi Digital Transistor 50 V NPN 100 mA Surface Mount SOT-363 6-Pin MUN5216DW1T1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model MUN5216DW1T1G
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363
Standards/Approvals Pb-Free, RoHS
Pin Count 6
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 160
Transistor Polarity NPN
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 385mW
Transistor Configuration Dual

Key Features

  • This device integrates a transistor with two monolithic bias resistors to simplify circuit design.
  • It uses a SOT-363 package with 6 pins for compact mounting.
  • The transistor has a dual configuration suitable for various switching applications.
  • It features a maximum power dissipation of 385 mW and minimum DC current gain (hFE) of 160.
  • Operating temperature range extends up to 150°C for reliable industrial use.
  • Pin dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.
  • Meets Pb-Free, RoHS compliance and automotive standard AEC-Q101.
  • Collector-emitter saturation voltage is low at 0.25 V for efficient operation.

Product Description

onsemi MUN5216DW1T1G is a digital transistor designed for surface mount applications featuring an NPN polarity and dual transistor configuration. It supports a maximum collector-emitter voltage of 50 V and a collector current up to 100 mA. This transistor comes in a compact SOT-363 6-pin package with dimensions of 2.2 mm (length) by 2.2 mm (width) by 1.1 mm (height), making it ideal for space-sensitive electronic circuits.

The integrated monolithic bias network incorporates two resistors, eliminating the need for external resistor biasing components. This setup simplifies circuit design, reduces board space, and minimizes component count, resulting in cost-effective and reliable assemblies. The device has a maximum power dissipation of 385 mW and provides a minimum DC current gain (hFE) of 160, ensuring good amplification characteristics.

Designed to meet industry requirements, the MUN5216DW1T1G is Pb-Free and RoHS compliant, supporting environmentally friendly manufacturing. It also meets the automotive-grade AEC-Q101 standard, suitable for automotive and other critical applications requiring reliable long-term performance.

The transistor has a maximum collector-emitter saturation voltage (VceSAT) of 0.25 V, which ensures efficient switching with minimal power loss. It operates reliably up to 150°C, accommodating a broad range of environmental conditions common in industrial, automotive, and electronic manufacturing contexts.

Common applications include replacing discrete transistor and resistor bias networks in switching, amplification, and driver circuits. Its small package and integrated bias resistors support compact designs in consumer electronics, automotive electronics, and industrial control systems.

This device integrates a transistor with monolithic bias resistors to reduce circuit complexity. Compact 6-pin SOT-363 package suitable for surface-mount technology. Supports high temperature operation up to 150°C for robust performance.

Compliant with Pb-Free, RoHS, and automotive AEC-Q101 standards. Ideal for industrial, automotive, and electronic circuit applications requiring digital transistor functions. Explore more high-quality semiconductor components and Digital Transistors in the Electronics & Electricals category at EnvMart for your next industrial or manufacturing project.

onsemi Digital Transistor 50 V NPN 100 mA Surface Mount SOT-363 6-Pin MUN5216DW1T1G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for the MUN5216DW1T1G is 50 V.

This model can handle a maximum continuous collector current (Ic) of 100 mA.

The maximum power dissipation for this transistor is 385 mW.

It operates reliably up to a maximum temperature of 150°C.

The SOT-363 package dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) for this transistor is 160.

This model features a dual transistor configuration.

Yes, it is compliant with Pb-Free and RoHS standards, as well as the automotive AEC-Q101 standard.

The maximum collector-emitter saturation voltage (VceSAT) is 0.25 V.

This transistor has a pin count of 6.

The mounting type for this model is surface mount.

It is suitable for various switching applications, amplification, and driver circuits in consumer and automotive electronics.

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