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Nexperia Silicon Junction Switching Diode Single 200 mA 75 V 2-Pin SOD-323 BAS416,115

Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.05mm
Length 1.8mm
Model BAS416,115
Width 1.35mm
Mount Type Surface
Series BAS416
Maximum Operating Temperature 150°C
Package Type SOD-323
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V
onsemi Switching Diode, Single, 200 mA, 2-Pin 70 V SOD-323 MMDL6050T1GBrand onsemi

Key Features

  • Supports surface mount technology for high-density circuit designs.
  • Maximum power dissipation of 250 mW ensures reliable operation.
  • Low capacitance and fast switching with peak reverse recovery time of 4 ns.
  • Operating temperature range from -65°C to 150°C suits demanding environments.
  • Peak non-repetitive forward surge current rating of 4 A for transient tolerance.
  • Ideal for use in electronic circuits requiring fast switching and low leakage.
  • Manufactured in China to high semiconductor quality standards.

Product Description

Nexperia BAS416,115 Silicon Junction Switching Diode is engineered for reliable switching applications with a maximum forward current of 200 mA and peak reverse voltage rating of 75 V. Packaged in a compact 2-pin SOD-323 surface mount package, this diode supports high-density PCB designs, ideal for industrial, consumer electronics, and power management systems.

The diode features a peak reverse recovery time of 4 ns resulting in efficient fast switching performance. Its maximum power dissipation is 250 mW, supporting continuous operation at elevated temperatures up to 150°C, and a minimum operating temperature down to -65°C, ensuring durability in harsh environments.

This semiconductor component provides a peak non-repetitive forward surge current of 4 A, making it robust against transient surges. With its small dimensions (length 1.8 mm, width 1.35 mm, height 1.05 mm), the BAS416,115 contributes to space-saving layouts in miniature electronic devices and circuit boards.

Designed specifically for switching diode applications, it supports customized high-density circuit designs with low leakage and high voltage tolerance, making it suitable for advanced electronic circuits, power supply boards, and embedded systems.

Supports surface mount technology for high-density circuit layouts. Maximum forward current of 200 mA balances power and efficiency. Fast switching speed with 4 ns peak reverse recovery time. High operating temperature range from -65°C to 150°C enhances reliability.

Compact SOD-323 package minimizes PCB footprint and simplifies assembly. Peak surge current rating up to 4 A tolerates transient conditions. Low forward voltage drop of 1.25 V reduces power loss. Manufactured to rigorous semiconductor quality standards in China.

This Nexperia diode is optimal for industrial, commercial, and electronic manufacturing applications requiring durable, fast-switching diodes with compact form factors. Explore other Switching Diode components on EnvMart for a broad range of semiconductor solutions.

Nexperia Silicon Junction Switching Diode Single 200 mA 75 V 2-Pin SOD-323 BAS416,115
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Frequently Asked Questions

The maximum forward current of this diode is 200 mA.

The peak reverse voltage rating for the BAS416,115 is 75 V.

This model is packaged in a compact 2-pin SOD-323 surface mount package.

The peak reverse recovery time for the BAS416,115 is 4 ns.

The operating temperature range for this model is from -65°C to 150°C.

The maximum power dissipation for this diode is 250 mW.

The peak non-repetitive forward surge current rating for this diode is 4 A.

The dimensions of this model are 1.8 mm in length, 1.35 mm in width, and 1.05 mm in height.

The maximum forward voltage drop for the BAS416,115 is 1.25 V.

This diode supports surface mount technology for high-density circuit designs.

This model is suitable for use in electronic circuits requiring fast switching and low leakage, such as power management systems and embedded systems.

The BAS416,115 is manufactured in China to high semiconductor quality standards.

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