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Nexperia P-Channel Enhancement MOSFET 10.3 A 30 V 8-Pin MLPAK33 PXP013-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP013-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The device uses Trench MOSFET technology for enhanced performance.
- Has a low threshold voltage suitable for high-side load switching.
- Supports battery management and DC-to-DC conversion applications.
- Features 8 surface-mount pins in an MLPAK33 package for compact PCB designs.
- Capable of dissipating maximum power of 81 W with operating temperature range from -55°C to 175°C.
- Designed for enhancement mode operation with max gate-source voltage of 20 V.
- Offers a drain-source resistance of 13.6 mΩ ensuring efficient conduction.
- Ideal for switching circuits in industrial and electronic applications.
Product Description
The Nexperia PXP013-30QLJ is a high-quality P-Channel enhancement mode MOSFET housed in an 8-pin MLPAK33 (SOT8002) surface-mounted plastic package. This device is based on advanced Trench MOSFET technology, which provides a low threshold voltage and high efficiency for switching applications.
With a maximum continuous drain current of 10.3 A and a maximum drain-source voltage rating of 30 V, it is well-suited for demanding power management roles such as high-side load switching, battery management systems, and DC-to-DC converters in industrial, manufacturing, and electronic equipment.
The transistor can handle a maximum power dissipation of 81 W and operates safely within a temperature range from -55°C to 175°C, making it robust for diverse environmental conditions.
The 8-pin MLPAK33 package ensures a compact footprint and surface-mount installation, facilitating efficient PCB layouts that save space and improve thermal management.
Key features include a maximum gate-source voltage rating of 20 V, a low on-resistance of 13.6 mΩ for minimal conduction losses, and enhancement mode channel operation. These attributes make the PXP013-30QLJ suitable for switching circuits where precise control and reliable performance are required.
The device integrates Trench MOSFET technology for superior switching speed and efficiency. Its compact 8-pin MLPAK33 package suits modern electronic assemblies and automated manufacturing. Common applications include battery-powered devices, power converters, and industrial control electronics.
Designed to meet demanding temperature specifications ensuring reliable operation under harsh conditions. Nexperia's MOSFET contributes to improved energy efficiency and system performance. Discover more components in the MOSFET category at EnvMart to support your next electronics design project.
Explore more products in our Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
It has a maximum drain-source voltage rating of 30 V.
The device can dissipate a maximum power of 81 W.
It operates within a temperature range of -55°C to 175°C.
This MOSFET is housed in an 8-pin MLPAK33 package.
The maximum gate-source voltage rating is 20 V.
It has a drain-source resistance of 13.6 mΩ.
This model uses a P-channel enhancement mode.
It is suitable for high-side load switching, battery management systems, and DC-to-DC converters.
This MOSFET has a pin count of 8.
The country of origin for this device is India.
It is designed for surface mounting.
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