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Nexperia N-Channel MOSFET, 10.3 A, 30 V, 3-Pin SOT-23 PMV13XNEAR

Category Semiconductor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PMV13XNEAR
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10.3A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 13.6mΩ
Maximum Power Dissipation Pd 81W
Maximum Gate Source Voltage Vgs 20V

Key Features

  • This device features trench MOSFET technology enabling very fast switching.
  • It operates over an extended temperature range from -55°C to 175°C.
  • Has a low threshold voltage for efficient switching performance.
  • Supports a maximum gate-source voltage of 20 V for versatile applications.
  • Ideal for DC to DC converters, low-side load switches, and high-speed line drivers.
  • Compact surface-mount design ensures easy integration in modern electronic circuits.
  • No automotive or standard approvals, suitable for general industrial and electronic applications.

Product Description

The Nexperia PMV13XNEAR is an N-channel enhancement mode MOSFET designed with trench technology to provide fast switching and efficient performance in compact surface-mount packages. Rated for a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, this device is well suited for power management applications in electronics and industrial equipment.

Its low threshold voltage facilitates efficient control while the extended operating temperature range from -55°C up to 175°C allows reliable operation in both harsh and demanding conditions.

This MOSFET comes in a 3-pin SOT-23 package type designed for surface mounting, making it ideal for compact circuit boards and modern PCB designs.

Typical applications include DC to DC converters, low-side load switching, switching circuits, and high-speed line driving operations. The device lacks specific automotive or standard certifications but offers versatility for general electronic projects and manufacturing environments.

This device features trench MOSFET technology for fast switching. Low threshold voltage ensures efficient operation. Wide operating temperature range from -55°C to 175°C. Compact 3-pin SOT-23 surface-mount package. Maximum continuous drain current of 10.3 A.

Maximum drain-source voltage of 30 V. Maximum gate-source voltage of 20 V. Suitable for power switching and load control applications.

These characteristics make the Nexperia PMV13XNEAR an excellent choice for industrial, consumer electronics, and manufacturing applications where efficient power MOSFET performance is required.

Explore more MOSFET and Semiconductor options in the Electronics & Electricals category at EnvMart for your industrial and technological needs.

Nexperia N-Channel MOSFET, 10.3 A, 30 V, 3-Pin SOT-23 PMV13XNEAR
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Frequently Asked Questions

The maximum continuous drain current of this model is 10.3 A.

It supports a maximum drain-source voltage of 30 V.

This device operates over an extended temperature range from -55°C to 175°C.

This model comes in a 3-pin SOT-23 surface-mount package type.

The maximum gate-source voltage is 20 V.

It is suitable for applications such as DC to DC converters, low-side load switches, and high-speed line drivers.

The maximum power dissipation is rated at 81 W.

This device features an N-channel type.

The maximum drain-source resistance is 13.6 mΩ.

The minimum operating temperature is -55°C.

The country of origin for this model is India.

The trench MOSFET technology enables very fast switching, enhancing its efficiency in applications.

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