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Infineon MOSFET Gate Driver, 2 A Output Current, 11 Pin, 11 V Supply, PG-VSON-10 Package 1EDN7116GXTMA1

Category MOSFET Gate Driver Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model 1EDN7116GXTMA1
Output Current 2A
Maximum Operating Temperature 125°C
Package Type PG-VSON-10
Minimum Operating Temperature -40°C
Pin Count 11
Minimum Supply Voltage 11V
Fall Time 3ns
Driver Type MOSFET

Key Features

  • Optimized for CoolGaN HEMTs and compatible with Schottky Gate GaN HEMTs and Silicon MOSFETs.
  • True differential input prevents false triggering and enhances noise immunity.
  • High common-mode input voltage tolerance supports both low-side and high-side drivers.
  • Active Miller clamp with 5 A sink capability avoids induced turn-on during switching.
  • Adjustable charge pump for negative turn-off voltage supply.
  • JEDEC qualification confirms industrial-grade reliability.
  • Wide operating temperature range from -40°C to 125°C for harsh environments.
  • Compact PG-VSON-10 package ensures minimal PCB footprint.

Product Description

The Infineon 1EDN7116GXTMA1 MOSFET Gate Driver is a single-channel gate driver IC delivering a peak output current of 2 A. Housed in a compact PG-VSON-10 package with 11 pins, it is designed for power management applications requiring precise gate control of MOSFET and GaN devices, especially CoolGaN HEMTs. This component operates at a minimum and maximum supply voltage of 11 V, ensuring consistent performance in demanding environments.

This gate driver’s truly differential input (TDI) allows independent control of the output state from the driver’s reference ground, providing immunity against ground bounce and ensuring reliable operation in both low-side and high-side configurations. Its high common-mode input voltage tolerance of up to 150 V static and 200 V dynamic extends its usability for diverse power electronics applications.

Infineon’s 1EDN7116GXTMA1 incorporates an active Miller clamp with 5 A sink capability to prevent voltage-induced false turn-ons, enhancing the switching reliability and efficiency of connected MOSFETs or GaN devices. The adjustable charge pump facilitates negative turn-off voltages, further improving device control and power efficiency.

The device is compatible with logic input levels of 3.3 V and 5 V, ensuring easy interface with a variety of microcontrollers and digital control systems. It demonstrates a fast fall time of just 3 ns to support high-frequency switching applications.

Optimized for CoolGaN HEMTs and compatible with Schottky Gate GaN HEMTs and Silicon MOSFETs. True differential input prevents false triggering and enhances noise immunity. High common-mode input voltage tolerance supports both low-side and high-side drivers.

Active Miller clamp with 5 A sink capability avoids induced turn-on during switching. Adjustable charge pump for negative turn-off voltage supply. JEDEC qualification confirms industrial-grade reliability. Wide operating temperature range from -40°C to 125°C for harsh environments.

Compact PG-VSON-10 package ensures minimal PCB footprint. Fast switching performance with 3 ns fall time.

This gate driver IC is ideal for industrial, power management, automotive, and manufacturing applications requiring efficient and robust gate control of MOSFET and GaN transistors. It supports designs involving energy conversion, motor control, and high-frequency power supplies.

Browse EnvMart’s comprehensive selection of Semiconductors and Power Management ICs for reliable, high-performance components.

Infineon MOSFET Gate Driver, 2 A Output Current, 11 Pin, 11 V Supply, PG-VSON-10 Package 1EDN7116GXTMA1
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Frequently Asked Questions

The output current of this gate driver is 2 A, providing sufficient drive capability for controlling MOSFET and GaN devices.

This model operates within a temperature range of -40°C to 125°C, making it suitable for harsh environments.

The gate driver is housed in a PG-VSON-10 package, which features a compact design to minimize PCB footprint.

The fall time for this gate driver is 3 ns, supporting high-frequency switching applications.

The minimum supply voltage required for this model is 11 V, ensuring consistent performance in power management applications.

Yes, it is compatible with logic input levels of 3.3 V and 5 V, allowing easy interfacing with various microcontrollers and digital control systems.

It includes a true differential input to prevent false triggering and an active Miller clamp with a 5 A sink capability to avoid induced turn-on during switching.

This device is a MOSFET driver, specifically optimized for controlling CoolGaN HEMTs and compatible with Schottky Gate GaN HEMTs and Silicon MOSFETs.

It is ideal for industrial, power management, automotive, and manufacturing applications that require efficient gate control of MOSFET and GaN transistors.

The gate driver has a high common-mode input voltage tolerance of up to 150 V static and 200 V dynamic, enhancing its usability in various power electronics applications.

This gate driver is manufactured in India, ensuring compliance with industrial-grade standards.

The 1EDN7116GXTMA1 features an 11-pin configuration, allowing for compact integration into circuit designs.

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