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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 2.3mm |
| Length | 4.7mm |
| Model | 2SCR293PHZGT100 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | 2SCR293P HZG |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Minimum DC Current Gain hFE | 680 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 30V |
| Maximum Power Dissipation Pd | 0.5W |
| Maximum DC Collector Current Idc | 2A |
| Maximum Transition Frequency ft | 320MHz |
The ROHM 2SCR293PHZGT100 transistor is a high reliability bipolar NPN device engineered for middle power low frequency amplifier applications commonly found in industrial and automotive electronics. With a maximum collector current of 2 A and collector-emitter voltage rating of 30 V, this surface mount transistor in a compact 3-pin SOT-89 package is optimized for efficient operation within demanding electrical environments.
It supports a wide operating temperature range from -55°C to 150°C, making it suitable for automotive and industrial conditions. The transistor exhibits a minimum DC current gain (hFE) of 680 facilitating effective signal amplification while maintaining low saturation voltage (VCE(sat)).
With a maximum power dissipation of 0.5 W and transition frequency of 320 MHz, the 2SCR293PHZGT100 balances power handling and speed requirements for a variety of applications. Its pin count of three ensures compatibility with standard transistor footprints on printed circuit boards.
This product does not carry specific automotive industry approvals such as AEC-Q101 but meets the voltage and current specifications expected from a mid-power NPN transistor. Its package dimensions (4.7 mm length, 1.6 mm width, 2.3 mm height) and surface mount design support automated manufacturing workflows for electronic assemblies.
Ideal for use in industrial controls, consumer electronics, telecommunications, and automotive circuits, this ROHM transistor offers reliable performance in DC amplifier stages and switching applications where moderate frequency response and power dissipation are required.
Supports a maximum operating temperature of 150°C for high reliability. Features a maximum power dissipation of 0.5 W suitable for middle power applications. Designed for low frequency amplification with a high DC current gain of 680.
Built with a maximum transition frequency of 320 MHz for moderate switching speed. Has robust voltage ratings including 30 V collector base and 6 V emitter base maximum voltages. Compact physical dimensions with length 4.7 mm, width 1.6 mm, and height 2.3 mm.
Supplied in reel format ready for automated surface mounting processes. Explore the full ROHM bipolar transistor range and related semiconductor products in the EnvMart catalogue for professional electronic component sourcing.
Explore more products in our Bipolar Transistors category.
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