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ROHM Bipolar Transistor, NPN 100 mA, 400 V, 3-Pin SOT-89 2SCR346PT100Q

Category Bipolar Transistor Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.5mm
Length 4.7mm
Model 2SCR346PT100Q
Width 2.7mm
Mount Type Surface
Series 2SCR346P
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 82
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 400V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 100mA

Key Features

  • Supports maximum DC collector current of 100 mA.
  • Maximum collector-emitter voltage rating of 400 V ensures high voltage operation.
  • Features an NPN transistor polarity suitable for low-frequency amplifiers.
  • Compact SOT-89 package with 3-pin configuration enables surface mounting.
  • Maximum power dissipation of 2 W allows efficient heat management.
  • Operating temperature ranges from -55°C to a maximum of 150°C.
  • Minimum DC current gain (hFE) of 82 ensures reliable amplification.
  • Maximum emitter-base voltage of 7 V for stable operation.

Product Description

ROHM 2SCR346PT100Q Bipolar Transistor is a high-voltage NPN transistor designed for low-frequency amplifier applications. It features a maximum collector-emitter voltage of 400 V and supports a collector current of up to 100 mA. The transistor is housed in a compact 3-Pin SOT-89 surface mount package, making it suitable for space-constrained electronic designs.

This transistor is capable of dissipating a maximum power of 2 W and operates efficiently within a temperature range of -55°C to 150°C. The minimum DC current gain (hFE) is 82, ensuring dependable switching and amplification performance. With emitter-base voltage limited to 7 V, it delivers stable operation in various electronic circuits.

The dimensions of this component are 4.7 mm in length, 2.7 mm in width, and 1.5 mm in height, further complimenting compact PCB designs. It does not comply with automotive industry standards, making it best suited for general electronics and power connector applications.

Ideal for Industrial electronics, power conversion, telecommunications, signal amplification, and general-purpose semiconductor usage within laboratory and manufacturing environments.

Supports maximum DC collector current of 100 mA. Maximum collector-emitter voltage rating of 400 V ensures high voltage operation. Features an NPN transistor polarity suitable for low-frequency amplifiers. Compact SOT-89 package with 3-pin configuration enables surface mounting.

Maximum power dissipation of 2 W allows efficient heat management. Operating temperature ranges from -55°C to a maximum of 150°C. Minimum DC current gain (hFE) of 82 ensures reliable amplification. Dimensions: length 4.7 mm, width 2.7 mm, height 1.5 mm.

Maximum emitter-base voltage of 7 V for stable operation. No automotive standard approvals; ideal for general electronic component applications. Explore more high-quality semiconductors and Bipolar Transistors from ROHM in EnvMart's Electronics & Electricals category.

ROHM Bipolar Transistor, NPN 100 mA, 400 V, 3-Pin SOT-89 2SCR346PT100Q
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Frequently Asked Questions

The maximum collector-emitter voltage rating is 400 V, allowing for high voltage operation.

It supports a maximum DC collector current of 100 mA.

This transistor is housed in a compact SOT-89 package with a 3-pin configuration suitable for surface mounting.

The operating temperature ranges from -55°C to a maximum of 150°C.

The minimum DC current gain (hFE) is 82, ensuring reliable amplification performance.

It has a maximum power dissipation of 2 W, allowing for efficient heat management.

The maximum emitter-base voltage is 7 V, which contributes to stable operation in various circuits.

The dimensions are 4.7 mm in length, 2.7 mm in width, and 1.5 mm in height.

It features an NPN transistor polarity, suitable for low-frequency amplifiers.

It is ideal for industrial electronics, power conversion, telecommunications, signal amplification, and general-purpose semiconductor usage.

No, it does not comply with automotive industry standards and is best suited for general electronics applications.

The country of origin for this transistor is India.

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