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Texas Instruments MOSFET Gate Driver 2 Outputs 4A 8-Pin SOIC 17V UCC27211DDA
Specifications
| Country of Origin | China |
|---|---|
| Brand | Texas Instruments |
| Height | 1.55mm |
| Length | 5mm |
| Model | UCC27211DDA |
| Width | 4mm |
| Mount Type | Surface |
| Series | UCC2721xA |
| Output Current | 4A |
| Maximum Operating Temperature | 140°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 7.2ns |
| Pin Count | 8 |
| Minimum Supply Voltage | 17V |
| Number of Drivers | 2 |
| Fall Time | 5.5ns |
| Driver Type | MOSFET |
Key Features
- Provides dual MOSFET gate driver outputs for efficient switching.
- Output current rating of 4A ensures robust drive capability.
- Compact 8-Pin SOIC surface-mount package with dimensions 5mm x 4mm x 1.55mm.
- Fast switching times with 7.2ns rise time and 5.5ns fall time.
- Operates over a wide temperature range from -40°C to 140°C.
- Minimum and maximum supply voltage both rated at 17V for consistent operation.
- Designed for surface mounting in power management and semiconductor applications.
- Series UCC2721xA known for reliability in MOSFET and IGBT gate driving.
Product Description
Texas Instruments UCC27211DDA is a high-performance MOSFET gate driver IC designed for efficient half-bridge switching applications. It features dual outputs capable of driving MOSFET gates with peak currents of 4A, enabling fast and reliable switching, critical in power management circuits.
The device is packaged in a compact 8-Pin SOIC housing measuring 5mm length, 4mm width, and 1.55mm height, optimized for surface mounting on printed circuit boards. It operates at a supply voltage of 17V, supporting a broad temperature range from -40°C to 140°C, making it suitable for demanding industrial and automotive environments.
Key electrical characteristics include a rapid rise time of 7.2 nanoseconds and fall time of 5.5 nanoseconds, ensuring minimal switching losses and high efficiency in converter and driver designs. The driver supports two independent outputs, simplifying half-bridge driver design in multiple electronic control applications.
This gate driver is ideal for use in industrial electronics, power management ICs, motor control systems, and various semiconductor switching applications. It is manufactured in China and tested to meet stringent quality requirements.
Provides dual MOSFET gate driver outputs for efficient switching. Output current rating of 4A ensures robust drive capability. Compact 8-Pin SOIC surface-mount package with dimensions 5mm x 4mm x 1.55mm. Fast switching times with 7.2ns rise time and 5.5ns fall time.
Operates over a wide temperature range from -40°C to 140°C. Minimum and maximum supply voltage both rated at 17V for consistent operation. Designed for surface mounting in power management and semiconductor applications.
Series UCC2721xA known for reliability in MOSFET and IGBT gate driving. Explore a wide range of power management solutions and MOSFET Gate Drivers from Texas Instruments on EnvMart for advanced industrial and electronic designs.
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Frequently Asked Questions
The output current rating of this model is 4A, providing robust drive capability for MOSFET gates.
The rise time is 7.2 nanoseconds and the fall time is 5.5 nanoseconds, ensuring fast switching performance.
It operates over a wide temperature range from -40°C to 140°C, suitable for various industrial applications.
The device is packaged in an 8-Pin SOIC format with dimensions of 5mm in length, 4mm in width, and 1.55mm in height.
This model features two independent outputs, allowing for efficient half-bridge driver designs.
Both the minimum and maximum supply voltage are rated at 17V, ensuring consistent operation.
It is designed for surface mounting on printed circuit boards, optimizing space and performance.
This model is part of the UCC2721xA series, known for reliability in driving MOSFETs and IGBTs.
It is ideal for use in industrial electronics, power management ICs, motor control systems, and various semiconductor switching applications.
The height of this model is 1.55mm, making it compact for various electronic designs.
This gate driver is manufactured in China, adhering to stringent quality requirements.
It is a MOSFET gate driver, specifically designed for efficient half-bridge switching applications.
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