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Nexperia Small Signal Switching Diode Common Anode 215 mA 3-Pin 90 V SOT-23 (TO-236AB) BAW56,215

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Nexperia Small Signal Switching Diode Common Anode 215 mA 3-Pin 90 V SOT-23 (TO-236AB) BAW56,215

Name: Nexperia Small Signal Switching Diode Common Anode 215 mA 3-Pin 90 V SOT-23 (TO-236AB) BAW56,215
Brand: Nexperia
SKU: 286843
Price: 0.03 USD
Availability: InStock

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Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	BAW56,215
Width	1.4mm
Mount Type	Surface
Series	BAW56
Maximum Operating Temperature	150°C
Package Type	SOT-23 (TO-236AB)
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	250mW
Diode Configuration	Common Anode
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	90V

Key Features

Designed for high-speed switching applications with peak reverse recovery time of 4 ns.
Supports maximum forward current of 215 mA and peak surge current up to 4 A.
Encased in a surface mount SOT-23 package measuring 3 mm length, 1.4 mm width, and 1 mm height.
Capable of handling maximum peak repetitive reverse voltage of 90 V and maximum forward voltage of 1.25 V.
Operates reliably within temperature ranges from -65°C to 150°C.
Constructed as silicon junction type with 3 pins for mounting and integration in compact circuit designs.
Power dissipation capped at 250 mW ensuring efficient thermal performance.
Widely used in electronic components, power and connectors for discrete semiconductor applications.

Product Description

Nexperia BAW56,215 is a small signal switching diode featuring a common anode configuration. It is designed to operate with a maximum forward current of 215 mA and withstand peak non-repetitive surge currents up to 4 A. The diode is housed in a surface mount SOT-23 (TO-236AB) package, measuring 3 mm in length, 1.4 mm in width, and 1 mm in height.

This diode exhibits a maximum peak repetitive reverse voltage rating of 90 V and a maximum forward voltage of 1.25 V. It supports high-speed switching with a peak reverse recovery time of just 4 nanoseconds. Its silicon junction construction ensures efficient operation in a variety of electronic circuits.

The device is capable of operating across a broad temperature range from -65°C to 150°C, making it suitable for demanding industrial and commercial applications. With a maximum power dissipation of 250 mW, it maintains an effective thermal footprint when incorporated into PCB designs.

This diode is ideal for integration in customized high-density circuit designs and is commonly used in electronic components, power and connector assemblies for discrete semiconductor switching diode applications.

High-speed switching diode with 4 ns recovery time. Compact surface mount SOT-23 package for easy PCB assembly. Maximum forward current rating of 215 mA and surge capability of 4 A. Operates from -65°C to 150°C for industrial reliability.

Rated for 90 V peak repetitive reverse voltage. Low forward voltage drop of 1.25 V for energy efficiency. Suitable for modern electronic and power connector applications. Explore our extensive range of semiconductors and discrete Switching Diodes at EnvMart for industrial, laboratory, and manufacturing applications.