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| Country of Origin | India |
|---|---|
| Brand | Renesas Electronics |
| Height | 1.75mm |
| Length | 5mm |
| Model | ISL2111ABZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | ISL2111 |
| Output Current | 4A |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Number of outputs | 2 |
| Rise Time | 300ns |
| Pin Count | 8 |
| Minimum Supply Voltage | 14V |
| Number of Drivers | 2 |
| Fall Time | 190ns |
| Driver Type | MOSFET |
Renesas Electronics ISL2111ABZ is a high-performance MOSFET Gate Driver designed for driving N-Channel half-bridge power MOSFETs in industrial and power management applications. This device features 2 driver outputs capable of delivering 4 amps of current, operating from a minimum supply voltage of 14 volts and supporting a maximum bootstrap voltage up to 114V, enabling efficient high-frequency switching and improved MOSFET control.
The ISL2111ABZ comes in an 8-pin SOIC surface mount package with a compact form factor measuring 5mm in length, 4mm in width, and 1.75mm in height to support space-constrained PCB designs. It operates reliably within a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments.
Key electrical characteristics include a fast fall time of 190 nanoseconds and rise time of 300 nanoseconds, facilitating efficient switching performance. The driver integrates two independent outputs, enhancing the design flexibility of half-bridge MOSFET configurations commonly used in motor drive circuits, power converters, and power supplies.
Due to the surface mount SOIC package and its robust driver capabilities, the ISL2111ABZ is favored in diverse applications such as industrial motor control systems, power management ICs, and other electronic components that require precise MOSFET gate control.
High frequency half-bridge driver optimized for N-Channel MOSFETs. Two driver outputs for independent gate control. 4A peak output current capacity per output. Compact SOIC 8-pin surface mount package. Wide operating temperature range to ensure rugged performance.
Fast switching times (190ns fall, 300ns rise) for high efficiency. Bootstrap supply voltage up to 114VDC capability. Designed for use in motor drivers, power supplies, and industrial controls. Improved performance over legacy HIP2100 and HIP2101 drivers.
This MOSFET Gate Driver is an ideal component for engineers requiring high-current driving performance in a compact, reliable package compliant with modern industrial power management standards.
Explore more power management and gate driver ICs in the convenient Electronics & Electricals category at EnvMart.
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