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Nexperia Darlington Transistor PNP 3-Pin SOT-23 -500 mA 60 V HFE:2000 BCV46,215

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Nexperia Darlington Transistor PNP 3-Pin SOT-23 -500 mA 60 V HFE:2000 BCV46,215

Name: Nexperia Darlington Transistor PNP 3-Pin SOT-23 -500 mA 60 V HFE:2000 BCV46,215
Brand: Nexperia
SKU: 260700
Price: 0.11 USD
Availability: InStock

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Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	BCV46,215
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	-500mA
Maximum Collector Emitter Voltage Vceo	60V
Number of Elements per Chip	2
Minimum DC Current Gain hFE	2000
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-10V
Maximum Collector Emitter Saturation Voltage VceSAT	1V
Maximum Collector Base Voltage VCBO	-80V
Maximum Collector Cut-off Current	-100nA
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	250mW
Nexperia BCV46,215 2 Darlington Transistor PNP, -500 mA 60 V HFE	2000, 3-Pin SOT-23

Key Features

PNP transistor designed for surface mount applications.
Compact 3-pin SOT-23 package suitable for space-limited designs.
Maximum power dissipation of 250 mW enabling moderate power handling.
Operating temperature range from -65°C to 150°C for reliability in various environments.
Automotive standard AEC-Q101 compliant ensuring high quality and durability.
Maximum collector base voltage of -80 V and emitter base voltage of -10 V.
Maximum collector cut-off current of -100 nA for low leakage performance.
Physical dimensions include 3 mm length and 1 mm height to fit densely packed circuits.

Product Description

Nexperia BCV46,215 Darlington Transistor is a PNP type bipolar transistor featuring 2 elements per chip in a compact 3-pin SOT-23 package. It supports a maximum continuous collector current of -500 mA with voltage ratings of 60 V collector emitter and -80 V collector base. The device’s high gain with a minimum DC current gain (hFE) of 2000 makes it ideal for amplification and switching in low power circuits.

Designed for surface-mount technology, this transistor offers a maximum power dissipation of 250 mW, suitable for various industrial, automotive, and electronic applications. It complies with automotive standard AEC-Q101, which ensures robustness and reliable operation under stringent automotive conditions.

With an operating temperature range from -65°C to 150°C, the BCV46,215 transistor performs reliably in demanding environments. Additional electrical characteristics include a maximum emitter base voltage of -10 V and a maximum collector emitter saturation voltage of 1 V, optimizing switching performance. It maintains very low leakage current with a maximum collector cut-off current of -100 nA, improving efficiency.

Physical dimensions of 3 mm length and 1 mm height allow easy integration into compact PCB layouts. This device is applicable in semiconductor discrete components sectors, power management, and signal amplification circuits, making it versatile for laboratory, industrial, automotive, and manufacturing uses.

PNP Darlington transistor with high current gain hFE of 2000. Surface mount SOT-23 package designed for space efficiency. Supports maximum collector current of -500 mA and voltage of 60 V. Meets AEC-Q101 automotive standard for quality assurance.

Operates in a wide temperature range of -65°C to 150°C. Low leakage current and saturation voltage optimize performance. Compact physical size fits modern electronics manufacturing. Used in industrial, automotive, laboratory, and semiconductor applications.

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