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onsemi Digital Transistor N-Channel Through Hole TO-3P Pack 3-Pin, Maximum Power Dissipation 500W FDA59N30
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 18.9mm |
| Length | 16.2mm |
| Model | FDA59N30 |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | UniFETTM |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3P |
| Pin Count | 3 |
| Transistor Polarity | N-Channel |
| Maximum Power Dissipation Pd | 500W |
Key Features
- This transistor features a TO-3P package type suitable for through-hole mounting.
- It supports an N-Channel transistor polarity ensuring efficient high voltage switching.
- The device operates reliably up to a maximum temperature of 150°C.
- Physical dimensions include 16.2mm length, 18.9mm height, and 5mm width.
- It belongs to the UniFETTM series known for low on-state resistance and excellent switching performance.
- The transistor is manufactured in China and complies with general industrial standards.
Product Description
onsemi FDA59N30 is a Digital Transistor featuring N-Channel polarity and a TO-3P package type designed for through-hole mounting applications. It boasts a maximum power dissipation rating of 500W, making it suitable for demanding electrical and power control environments.
This UniFETTM series MOSFET incorporates planar stripe and DMOS technology that reduces on-state resistance and enhances switching speed while providing high avalanche energy capability. Its design enables efficient use in switching power converter circuits, including power factor correction, flat panel display power supplies, ATX power supplies, and electronic ballast for lamps.
The transistor supports an operating temperature up to 150°C, ensuring reliability under heavy loads. Its compact physical dimensions - 16.2mm length, 18.9mm height, and 5mm width - facilitate installation in varied PCB layouts using through-hole techniques.
Built for general usage, this transistor offers robust performance in industrial, electronic, and power management applications. Its N-Channel configuration optimizes current conduction for switching and amplification tasks.
TO-3P package provides excellent thermal management and mechanical stability. Maximum power dissipation of 500W supports heavy electrical loads. Maximum operating temperature of 150°C ensures durability in harsh conditions.
Dimensions suited for standard through-hole mounting on printed circuit boards. Manufactured in China adhering to stringent quality controls and industry standards.
This high-performance Digital Transistor is suitable for engineers and technicians designing circuits requiring reliable, high power discrete semiconductor components. It is well suited for use in industrial automation, power electronics, and electronic device manufacturing sectors.
Explore EnvMart's Electronics & Electricals category for more semiconductor components and power management solutions matched to your project requirements.
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Frequently Asked Questions
The maximum power dissipation of this model is 500W, making it suitable for demanding electrical and power control environments.
The FDA59N30 has a length of 16.2mm, a height of 18.9mm, and a width of 5mm, which facilitates installation in various PCB layouts.
It operates reliably up to a maximum temperature of 150°C, ensuring durability under heavy loads.
This model features a TO-3P package type designed for through-hole mounting applications.
This digital transistor has an N-Channel polarity, which optimizes current conduction for switching and amplification tasks.
It belongs to the UniFETTM series, known for low on-state resistance and excellent switching performance.
The FDA59N30 has a pin count of 3, suitable for various circuit configurations.
This model is suitable for use in switching power converter circuits, including power factor correction and ATX power supplies.
It is manufactured in China, adhering to stringent quality controls and industry standards.
This transistor incorporates planar stripe and DMOS technology, which reduces on-state resistance and enhances switching speed.
The TO-3P package provides excellent thermal management and mechanical stability for the transistor during operation.
It is designed for robust performance in industrial, electronic, and power management applications, making it a reliable choice for engineers and technicians.
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