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onsemi Digital Transistor 50 V NPN Surface Mount 3-Pin MUN5214T1G

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onsemi Digital Transistor 50 V NPN Surface Mount 3-Pin MUN5214T1G

Name: onsemi Digital Transistor 50 V NPN Surface Mount 3-Pin MUN5214T1G
Brand: onsemi
SKU: 258458
Price: 0.03 USD
Availability: InStock

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Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	2.2mm
Model	MUN5214T1G
Width	2.4mm
Mount Type	Surface
Series	MUN5214
Maximum Operating Temperature	150°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	80
Transistor Polarity	NPN
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	310mW
Transistor Configuration	Single

Key Features

The transistor integrates a monolithic bias network with series base and base-emitter resistors.
Maximum collector emitter voltage (Vceo) is 50 V ensuring robust operation.
Minimum DC current gain (hFE) of 80 enhances switching performance.
Maximum power dissipation rating is 310 mW suitable for low power applications.
Compact dimensions of 2.2mm length, 2.4mm width, and 1mm height reduce board space usage.
Compatible with automotive standards, including AEC-Q101 qualification.
Designed to replace discrete transistor and external resistors, simplifying circuit design.
Maximum operating temperature up to 150°C offers reliability in demanding conditions.

Product Description

onsemi MUN5214T1G digital transistor is a surface mount NPN bipolar transistor designed for use in electronic circuits requiring a high level of integration and reliability.

This digital transistor combines a single transistor with an integrated monolithic bias resistor network which eliminates the need for external resistor components, thus significantly reducing board space and component count.

The device supports a maximum collector emitter voltage (Vceo) of 50 V and a maximum collector base voltage (VCBO) of 50 V, making it suitable for a wide range of low power switching and amplification applications.

Featuring a minimum DC current gain (hFE) of 80 and a power dissipation of 310 mW, it ensures efficient operation with low power loss. The transistor measures just 2.2 mm in length, 2.4 mm in width, and 1 mm in height, making it ideal for compact and space-constrained designs.

The MUN5214T1G meets the automotive standard AEC-Q101, assuring quality and performance in automotive electronics and other demanding environments with a maximum operating temperature of 150°C.

This device is designed to simplify circuit layouts by integrating the resistor bias network internally, thus offering cost-effective, space-saving solutions for industrial, automotive, consumer electronics, and communication applications.

The transistor eliminates the need for external base and emitter resistors. Offers improved reliability by lowering component count and assembly complexity. Certified to automotive-grade standards for use in rigorous conditions.

Support for surface mount technology (SMT) allows automated PCB assembly. Compact size benefits modern high-density electronics manufacturing.

For engineers and designers, the onsemi MUN5214T1G provides a versatile, reliable, and compact solution ideal for digital switching and amplification circuits in automotive, industrial, and consumer electronic devices.

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