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onsemi Digital Transistor, NPN Dual Configuration, 50 V, 100 mA, Surface Mount SOT-563, 6-Pin NSBC114EDXV6T1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model NSBC114EDXV6T1G
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-563
Standards/Approvals RoHS, Pb-Free
Pin Count 6
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 500mW
Transistor Configuration Dual

Key Features

  • Maximum collector emitter voltage of 50 volts provides reliable operation in moderate voltage circuits.
  • Maximum continuous collector current is 100 milliamps, suitable for low-power applications.
  • Integrated bias resistors simplify circuit design and reduce external components.
  • Compact dimensions of 2.2mm length, 2.2mm width, and 1.1mm height support high-density PCB layouts.
  • Maximum power dissipation of 500mW ensures stable performance under typical operating conditions.
  • Designed for automotive and industrial applications with AEC-Q101 qualification.
  • RoHS and Pb-Free compliant, promoting environmental safety.
  • Maximum operating temperature up to 150°C allowing for use in harsh environments.

Product Description

onsemi NSBC114EDXV6T1G Digital Transistor is a high-performance dual NPN transistor device integrated with a monolithic bias resistor network. This device replaces the need for separate resistors in the bias network, reducing component count and saving board space.

Packaged in a compact 6-pin SOT-563 surface mount package, the transistor measures 2.2mm by 2.2mm by 1.1mm, enabling miniaturized circuit designs for modern electronics.

Key electrical specifications include a maximum collector emitter voltage (Vceo) of 50 volts and maximum continuous collector current (Ic) of 100 mA, making it suitable for low-power switching and amplification applications. The device supports a maximum power dissipation of 500 milliwatts ensuring robust performance.

The transistor's built-in bias resistors simplify circuit design by eliminating the need for external series base and base-emitter resistors. The device also features a low collector emitter saturation voltage (VceSAT) of 0.25 volts, minimizing conduction losses in switching applications.

Qualified to meet automotive standard AEC-Q101 and compliant with RoHS and Pb-free directives, this transistor is suitable for automotive, industrial, and consumer electronic applications where quality and reliability are critical.

Maximum collector emitter voltage 50V for robust performance. Dual NPN transistor configuration integrated with bias resistors. Small footprint surface mount package SOT-563 with 6 pins. Low VceSAT of 0.25V for efficient switching.

High operating temperature up to 150°C for demanding environments. Compliance with RoHS, Pb-Free environmental standards. Automotive grade AEC-Q101 certification assuring quality and reliability.

This Digital Transistor series offers cost savings and circuit simplification for electronic engineers designing compact high-efficiency control circuits in automotive electronics, industrial machinery, and consumer devices.

Explore more electronic components and discrete semiconductors to complement your design requirements at EnvMart.

onsemi Digital Transistor, NPN Dual Configuration, 50 V, 100 mA, Surface Mount SOT-563, 6-Pin NSBC114EDXV6T1G
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) of this digital transistor is 50 volts, allowing for reliable operation in moderate voltage circuits.

This model has a maximum continuous collector current (Ic) of 100 milliamps, making it suitable for low-power applications.

The SOT-563 package has dimensions of 2.2mm in length, 2.2mm in width, and 1.1mm in height, supporting high-density PCB layouts.

The maximum power dissipation for this transistor is 500 milliwatts, ensuring stable performance under typical operating conditions.

The integrated bias resistors simplify circuit design by eliminating the need for external series base and base-emitter resistors, reducing component count and saving board space.

The maximum operating temperature for this digital transistor is 150°C, allowing for use in harsh environments.

This model is qualified to meet the automotive standard AEC-Q101, ensuring quality and reliability for automotive applications.

The transistor is compliant with RoHS and Pb-Free directives, promoting environmental safety in its applications.

This model features a dual NPN transistor configuration, which is suitable for various low-power switching and amplification applications.

The maximum collector emitter saturation voltage (VceSAT) is 0.25 volts, which minimizes conduction losses in switching applications.

The SOT-563 package has a pin count of 6, facilitating easy integration into circuit designs.

The minimum DC current gain (hFE) for this model is 35, which is essential for its amplification capabilities.

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