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onsemi Low VCE(sat) Digital PNP Transistor, SOT-23 Surface Mount, 3-Pin, -30 V, 710 mW MMBT589LT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 3.04mm |
| Model | MMBT589LT1G |
| Width | 2.64mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -30V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | -50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 710mW |
| Transistor Configuration | Single |
Key Features
- This transistor offers a maximum collector emitter voltage of -30 V for reliable performance.
- The device features a maximum power dissipation of 710 mW suitable for various electronic circuits.
- It has a minimum DC current gain of 100, ensuring effective current amplification.
- Compact SOT-23 package with dimensions 3.04 mm length, 2.64 mm width, and 1.1 mm height saves board space.
- Transistor polarity is PNP with 3 pins supporting single transistor configuration.
- Maximum operating temperature reaches up to 150°C suitable for automotive and industrial use.
- Compliant with automotive standard AEC-Q101 ensuring quality in automotive applications.
- Low saturation voltage results in higher efficiency and extended battery life in devices.
Product Description
onsemi MMBT589LT1G digital transistor is a miniature surface mount PNP transistor in the SOT-23 package, offering a low saturation voltage (VCE(sat)) and high current gain. It is specifically designed for low voltage, high speed switching applications requiring efficient energy control.
This device supports a maximum collector emitter voltage (Vceo) of -30 V and collector base voltage (VCBO) of -50 V, delivering stable operation. It features a maximum power dissipation of 710 mW and a minimum DC current gain (hFE) of 100, ensuring effective amplification.
The transistor has a compact form factor with dimensions of 3.04 mm length, 2.64 mm width, and 1.1 mm height in a 3-pin single transistor configuration. The maximum operating temperature is rated at 150°C, making it suitable for harsh industrial and automotive environments.
This component meets automotive standard AEC-Q101 and is available in Pb-free packaging, emphasizing reliability and environmental compliance. Typical applications include industrial electronics, automotive circuits, and other commercial electronics requiring efficient switching capabilities.
This transistor provides low saturation voltage reducing power loss. High current gain enhances circuit performance. Compact SOT-23 package optimizes PCB space utilization. Automotive grade certification supports rigorous quality needs.
Wide operating temperature range ensures durability. Surface mount design facilitates modern electronic assembly. Pb-free packaging supports RoHS compliance. Designed for use in high speed switching and energy-efficient applications.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) of this model is -30 V.
It has a maximum power dissipation rating of 710 mW.
The minimum DC current gain (hFE) for this transistor is 100.
The SOT-23 package dimensions are 3.04 mm in length, 2.64 mm in width, and 1.1 mm in height.
The maximum operating temperature for this transistor is rated at 150°C.
It complies with the automotive standard AEC-Q101.
This model features a single transistor configuration with 3 pins.
The maximum collector base voltage (VCBO) is -50 V.
It uses surface mount technology in its design.
The transistor polarity is PNP.
The maximum emitter base voltage (VEBO) is 5 V DC.
It is suitable for industrial electronics, automotive circuits, and other commercial electronics requiring efficient switching capabilities.
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