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Nexperia Switching Diode Single Silicon Junction 215 mA 2-Pin SOD-123 75 V BAS116H,115

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Nexperia Switching Diode Single Silicon Junction 215 mA 2-Pin SOD-123 75 V BAS116H,115

Name: Nexperia Switching Diode Single Silicon Junction 215 mA 2-Pin SOD-123 75 V BAS116H,115
Brand: Nexperia
SKU: 247000
Price: 0.08 USD
Availability: InStock

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Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.2mm
Length	2.7mm
Model	BAS116H,115
Width	1.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOD-123
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Power Dissipation Pd	375mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	3μs
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V

Key Features

This diode is designed for surface mount applications in electronic circuits.
Maximum forward voltage is 1.25 V allowing low power dissipation.
Supports peak reverse repetitive voltage of up to 75 V for reliable operation.
Offers high switching speed with a peak reverse recovery time of 3 microseconds.
Operates over a wide temperature range from -65°C to 150°C.
Compact dimensions of 2.7 mm length, 1.7 mm width, and 1.2 mm height ensure space-efficient mounting.
Low capacitance and high voltage design suits high-density circuit designs.
Maximum power dissipation rating is 375 mW for robust performance.

Product Description

Nexperia BAS116H,115 switching diode is a single silicon junction diode designed for precise switching in electronic and industrial applications. It supports a maximum forward current of 215 mA with a peak repetitive reverse voltage rating of 75 V, packaged in a small surface-mount SOD-123 form factor measuring 2.7 mm by 1.7 mm by 1.2 mm.

This diode features low forward voltage drop of up to 1.25 V which reduces power losses and supports efficient circuit performance. It exhibits a peak reverse recovery time of 3 microseconds, enabling high-speed switching suitable for telecommunications, power management, and control circuits.

Operating temperature tolerance from -65°C to 150°C ensures reliable performance across harsh industrial environments. With a maximum power dissipation of 375 mW and surge current capacity of 4 A, it withstands transient overloads effectively.

The diode’s low capacitance design facilitates customized high-density circuit layouts, optimizing space on PCBs. It is ideal for uses in semiconductor switching, discrete electronic components, and power supply protection roles within industrial, manufacturing, and electronic assembly sectors.

Nexperia's extensive quality control and robust design make the BAS116H,115 diode a dependable choice for engineers seeking a compact, high-performance switching diode. This product supports customized high-density circuit designs.

Low leakage and high-voltage diode suitable for demanding applications. High switching speed ensures efficient operation in electronic systems. Low capacitance enhances signal integrity and device responsiveness. Compact SOD-123 surface mount package ensures space savings on PCB layouts.

Operates over a wide temperature range from -65°C to 150°C for industrial use. Rated for 215 mA forward current and 75 V peak reverse voltage. Supports non-repetitive forward surge currents of up to 4 A. Explore a wide range of semiconductor Switching Diodes and discrete semiconductors at EnvMart, ideal for industrial, laboratory, manufacturing, and HVAC electronics applications.