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Nexperia Single Silicon Junction Switching Diode 215 mA Maximum Forward Current 75 V Peak Reverse Voltage BAS116H,115

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Nexperia Single Silicon Junction Switching Diode 215 mA Maximum Forward Current 75 V Peak Reverse Voltage BAS116H,115

Name: Nexperia Single Silicon Junction Switching Diode 215 mA Maximum Forward Current 75 V Peak Reverse Voltage BAS116H,115
Brand: Nexperia
SKU: 246996
Price: 0.07 USD
Availability: InStock

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Category Switching Diode Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.2mm
Length	2.7mm
Model	BAS116H,115
Width	1.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOD-123
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Power Dissipation Pd	375mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	3μs
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V

Key Features

Supports high density circuit designs with a compact SOD-123 package.
Features low leakage and high-voltage capability.
Offers high switching speeds with a peak reverse recovery time of 3 microseconds.
Operates over a wide temperature range from -65°C to 150°C.
Designed for efficient power dissipation up to 375 milliwatts.
Maximum forward voltage drop is 1.25 volts, ensuring efficient conduction.
Small size dimensions of 2.7 mm length, 1.7 mm width, and 1.2 mm height.
2-pin diode construction suitable for surface mount technology.

Product Description

The Nexperia BAS116H,115 is a single silicon junction switching diode designed for high efficiency in low current applications. It supports a maximum forward current of 215 mA and a peak repetitive reverse voltage of 75 V, making it suitable for switching applications in electronic circuits.

The diode is housed in a compact SOD-123 surface mount package, providing a small footprint for high density PCB layouts. Its low leakage current and high voltage tolerance allow for reliable performance in switching power supplies and signal processing.

Operating temperature ranges from a minimum of -65°C to a maximum of 150°C, ensuring stable operation in a variety of industrial and commercial environments.

Key features include high switching speed with a peak reverse recovery time of 3 microseconds and a maximum forward voltage of 1.25 V to minimize conduction losses. Power dissipation capability is rated at 375 milliwatts, suitable for small signal applications.

The small physical dimensions (2.7 mm length, 1.7 mm width, and 1.2 mm height) facilitate integration into compact electronics assemblies requiring surface mount components. Supports high density circuit designs with a compact SOD-123 package.

Features low leakage and high-voltage capability. Offers high switching speeds with a peak reverse recovery time of 3 microseconds. Operates over a wide temperature range from -65°C to 150°C. Designed for efficient power dissipation up to 375 milliwatts.

Maximum forward voltage drop is 1.25 volts, ensuring efficient conduction. Small size dimensions of 2.7 mm length, 1.7 mm width, and 1.2 mm height. 2-pin diode construction suitable for surface mount technology. This diode is ideal for use in industrial, commercial, and electronic design applications including switching regulators, power supplies, and signal processing circuits.

Explore the wide category of Switching Diodes and discrete semiconductors at EnvMart for more electronic components.