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Nexperia Darlington Transistor PNP 1 A 45 V HFE 1000 3-Pin SOT-89 BST60
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | BST60 |
| Mount Type | Surface |
| Series | BST60 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | -1A |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Number of Elements per Chip | 2 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | -1.3V |
| Maximum Collector Base Voltage VCBO | -60V |
| Maximum Collector Cut-off Current | -50nA |
| Maximum Power Dissipation Pd | 1.3W |
| Nexperia BST60 2 Darlington Transistor PNP, -1 A 45 V HFE | 1000, 3-Pin SOT-89 |
Key Features
- This transistor has a maximum continuous collector current of 1 ampere.
- It supports a maximum collector-emitter voltage of 45 volts providing robust performance.
- The device features a minimum DC current gain (hFE) of 1000 for efficient amplification.
- Packaged in a compact 3-pin SOT-89 surface mount package ideal for space-constrained circuits.
- Operates reliably across a wide temperature range from -65°C to 150°C.
- The maximum power dissipation is rated at 1.3 watts to accommodate moderate power devices.
- Transistor polarity is PNP, with 2 elements integrated per chip, configured as a Darlington pair.
- Suitable for use in industrial, electronic component manufacturing, power circuits, and signal amplification.
Product Description
Nexperia BST60 Darlington Transistor PNP model delivers high current gain with a maximum continuous collector current of 1 A and collector-emitter voltage rating of 45 V. Packaged in a compact 3-pin SOT-89 surface mount package, it is designed for efficient electronic circuit applications requiring high gain and moderate power dissipation of 1.3 W.
This transistor exhibits a minimum DC current gain (hFE) of 1000, ensuring effective signal amplification. Its PNP polarity and Darlington pair structure (2 elements per chip) make it suitable for power switching and amplification tasks in electronic devices.
The wide operating temperature range from -65°C to 150°C allows reliable operation in various environments and industrial applications. With maximum emitter base and collector base voltages of -5 V and -60 V respectively, plus a collector-emitter saturation voltage of -1.3 V, the BST60 offers stable performance characteristics.
Applications include power amplification, switching circuits in automotive electronics, industrial control systems, and power supply units. The device's compact SOT-89 package supports surface mounting for automated PCB assembly processes.
Key specifications such as a maximum collector cut-off current of -50 nA and absence of automotive standard certification are noted for precise design requirements. Set contains a single Nexperia BST60 transistor as detailed, facilitating integration in diverse electronic component assemblies.
Maximum continuous collector current: 1 A. Max collector-emitter voltage: 45 V. Minimum DC current gain (hFE): 1000. Surface mount SOT-89 package with 3 pins. Operating temperature range: -65°C to 150°C. Maximum power dissipation: 1.3 W.
PNP polarity with Darlington pair configuration. Collector-emitter saturation voltage: -1.3 V. Maximum emitter base voltage: -5 V. Maximum collector base voltage: -60 V. Explore more electronic components and discrete semiconductor devices at EnvMart for your industrial and manufacturing needs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 1 ampere.
It supports a maximum collector-emitter voltage of 45 volts.
The minimum DC current gain (hFE) is 1000, which ensures efficient amplification.
This transistor operates reliably across a wide temperature range from -65°C to 150°C.
The maximum power dissipation is rated at 1.3 watts.
It is packaged in a compact 3-pin SOT-89 surface mount package.
This model features 2 elements integrated per chip, configured as a Darlington pair.
The maximum emitter base voltage is -5 V and the maximum collector base voltage is -60 V.
The collector-emitter saturation voltage is rated at -1.3 V.
The height of the SOT-89 package is 1.6 mm and the length is 4.6 mm.
It is suitable for power amplification, switching circuits in automotive electronics, industrial control systems, and power supply units.
The country of origin for this model is India.
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