onsemi MOSFET Gate Driver 1.6 A 24-Pin 22V QFN NCP51705MNTXG

onsemi NCP51705MNTXG MOSFET Gate Driver is engineered for high-performance power management in industrial, automotive, and electronic applications requiring effective driving of silicon carbide MOSFET devices. This 24-pin QFN component delivers a peak output current of 6 A, a nominal gate voltage of up to 22V, and fast switching times with rise and fall times of 15 nanoseconds.

The device facilitates optimized SiC MOSFET operation by providing both high conduction efficiency and minimized switching losses. Its unique onboard charge pump allows generating a negative voltage rail for enhanced turn-off speed and robust immunity against rapid voltage changes (dV/dt), which is critical in high-reliability environments.

Featuring independent turn-on and turn-off adjustments, the NCP51705MNTXG enables precise tuning to meet system-specific performance and reliability requirements. The compact surface mount QFN package (4 mm by 4 mm, with a height of 950 μm) enhances ease of PCB integration, offering a space-efficient solution for complex electronic circuits.

This gate driver supports five output channels managed by a single driver and operates effectively from -40°C to 125°C, making it suitable for harsh operating conditions typically encountered in automotive and industrial sectors.

Designed specifically for SiC MOSFET transistors to minimize conduction losses. Delivers a maximum gate voltage of 22V for optimum device performance. Provides high peak current for fast turn-on and turn-off, reducing switching losses.

Utilizes an onboard charge pump for a selectable negative voltage rail to improve turn-off speed and dV/dt immunity. Supports independent adjustment of turn-on and turn-off characteristics for precise control. Operates reliably within a temperature range of -40°C to 125°C.

Compact surface-mount QFN package measuring 4mm by 4mm by 950 μm height. Capable of driving 5 outputs with one driver unit in the device.

This gate driver is ideal for use in power electronic systems in industrial manufacturing, automotive electronic controls, power conversion equipment, and other applications requiring efficient SiC MOSFET driving capabilities. Its advanced features contribute to improved system reliability, lower power loss, and easier implementation of isolated gate drive designs.

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