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Toshiba 30 V 1 A Surface Mount Schottky Barrier Switching Diode USC Package CUS520,H3F(T

Category Schottky Diodes & Rectifiers Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Model CUS520,H3F(T
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type USC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 2
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 30V
Rectifier Type Schottky
Peak Reverse Current Ir 5μA
Peak Non-Repetitive Forward Surge Current Ifsm 1A
Maximum Forward Voltage Vf 0.6V

Key Features

  • Surface mount USC package equivalent to SOD-323 and SC-76 packages.
  • Maximum continuous forward current of 1 Ampere.
  • Peak reverse repetitive voltage rated at 30 Volts.
  • Low forward voltage drop of 0.6 Volts ensuring energy efficiency.
  • Operates reliably between -55°C and 125°C operating temperature range.
  • Peak non-repetitive forward surge current of 1 Ampere for pulsed conditions.
  • Extremely low peak reverse current of 5 microamperes reducing leakage losses.
  • Fully RoHS compliant ensuring environmental safety.

Product Description

The Toshiba CUS520,H3F(T is a high-performance Schottky barrier switching diode with a 30 V peak reverse voltage and a continuous forward current rating of 1 Ampere. Packaged in the compact USC surface mount package, equivalent to SOD-323 and SC-76, it is well-suited for PCB applications requiring high speed switching with minimal power loss.

This diode features a low forward voltage drop of 0.6 V, enabling efficient switching, and exhibits exceptionally low reverse leakage current at 5 µA, contributing to improved circuit performance. Its operating temperature range from -55°C to 125°C makes it reliable across a wide variety of industrial and commercial environments.

The diode supports a peak non-repetitive forward surge current of 1 A, allowing it to manage transient current spikes without damage. The surface mount USC package ensures easy integration into automated manufacturing processes, ideal for electronics designers focusing on space-saving and performance.

Common applications include high-speed switching circuits, power rectification in low voltage DC to DC converters, and protection in power supplies across industrial, communications, and consumer electronics sectors. Compliance with RoHS standards underscores its eco-friendly design.

Surface mount USC package equivalent to SOD-323 and SC-76. Maximum continuous forward current: 1 A. Peak reverse repetitive voltage: 30 V. Forward voltage drop: 0.6 V. Operating temperature range: -55°C to 125°C. Peak non-repetitive forward surge current: 1 A.

Peak reverse current: 5 µA. RoHS compliant for environmental safety.

Explore our range of semiconductor devices for enhanced circuit design and assured reliability. This Toshiba switching diode combines compact packaging with robust electrical characteristics optimized for modern electronic assemblies.

Explore more products in our Schottky Diodes & Rectifiers category.

Toshiba 30 V 1 A Surface Mount Schottky Barrier Switching Diode USC Package CUS520,H3F(T
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Frequently Asked Questions

The maximum continuous forward current of this diode is 1 Ampere.

The peak reverse repetitive voltage rating is 30 Volts.

The forward voltage drop is 0.6 Volts, which contributes to energy efficiency during operation.

It operates reliably between -55°C and 125°C.

The peak non-repetitive forward surge current is rated at 1 Ampere for pulsed conditions.

The peak reverse current is 5 microamperes, which helps reduce leakage losses.

This diode is packaged in a USC surface mount package, which is equivalent to SOD-323 and SC-76 packages.

Yes, this diode is fully RoHS compliant, ensuring environmental safety.

The diode has a pin count of 2.

This model is a Schottky rectifier, known for its fast switching capabilities.

Common applications include high-speed switching circuits, power rectification in low voltage DC to DC converters, and protection in power supplies.

The country of origin for this diode is India.

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