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ROHM Infrared Phototransistor Surface Mount 4-Pin with 30V Collector Emitter Voltage RPI-0451E
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 5.2mm |
| Length | 7.8mm |
| Model | RPI-0451E |
| Width | 4.2mm |
| Mount Type | Surface |
| Series | RPI |
| Maximum Operating Temperature | 85°C |
| Minimum Operating Temperature | -25°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 4 |
| Typical Fall Time | 10μs |
| Peak Wavelength | 850nm |
| Spectrums Detected | Infrared |
| Collector Current | 30mA |
| Maximum Light Current | 10000μA |
| Maximum Dark Current | 0.5μA |
| Collector Emitter Voltage | 30V |
| Emitter Collector Voltage | 4.5V |
Key Features
- This phototransistor detects infrared spectrum with a peak wavelength of 850nm.
- It features a typical rise and fall time of 10 microseconds each for rapid response.
- The device supports a maximum collector current of 30mA and a collector emitter voltage of 30V.
- Operating temperature range is between -25°C to 85°C, suitable for various environments.
- RoHS compliant, ensuring it meets environmental and safety standards.
- Its series is RPI with no automotive standard certification.
Product Description
ROHM RPI-0451E Infrared Phototransistor is a surface mount, 4-pin device designed for efficient infrared detection with high accuracy and fast response times. It operates optimally within a temperature range from -25°C to 85°C and complies with RoHS standards, making it an environmentally friendly choice for industrial and electronic applications.
The phototransistor is engineered to detect infrared light with a peak wavelength of 850nm, and it features rapid signal timing with a typical rise and fall time of 10 microseconds each. It supports a maximum collector current of 30mA, a collector emitter voltage rating of 30V, and an emitter collector voltage of 4.5V, making it suitable for diverse electronic circuit designs.
Physically, it has a compact surface mount design with 4 pins and dimensions of 7.8mm (length), 5.2mm (height), and 4.2mm (width). These features ensure easy integration into PCB layouts for applications in electronics manufacturing, automation, consumer devices, and industrial controls.
Key unique features include a positioning pin for mounting accuracy, energy efficiency, and high operational efficiency. This phototransistor series RPI by ROHM is optimized for reliability and performance in optoelectronic sensing systems.
This phototransistor detects infrared spectrum with a peak wavelength of 850nm. Typical rise and fall times are 10 microseconds, enabling fast switching. Maximum collector current is 30mA, supporting strong signal response.
Compact surface mount 4-pin configuration with precise dimensions aids installation. Wide operating temperature range from -25°C to 85°C ensures versatility. RoHS certification confirms environmental compliance. Series RPI provides consistent and reliable performance.
This product is ideal for industrial electronics, sensor circuits, measurement instruments, and other commercial applications that demand precise infrared detection. Explore more advanced Phototransistors and optoelectronic components in the Electronics Components category at EnvMart.
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Frequently Asked Questions
The peak wavelength of this phototransistor is 850nm, which allows it to effectively detect infrared light.
The RPI-0451E supports a maximum collector current of 30mA, enabling strong signal response in applications.
This phototransistor operates within a temperature range of -25°C to 85°C, making it suitable for various environments.
The dimensions of this phototransistor are 7.8mm in length, 5.2mm in height, and 4.2mm in width.
This model features a 4-pin configuration, which aids in its surface mount installation.
The typical rise and fall times for the RPI-0451E are both 10 microseconds, allowing for rapid response.
Yes, this phototransistor is RoHS compliant, ensuring it meets environmental and safety standards.
The collector emitter voltage rating for the RPI-0451E is 30V, suitable for various electronic circuit designs.
This phototransistor is suitable for industrial electronics, sensor circuits, measurement instruments, and other commercial applications requiring precise infrared detection.
The maximum dark current for this phototransistor is 0.5μA, which is essential for minimizing noise in sensitive applications.
The emitter collector voltage for the RPI-0451E is 4.5V, which is important for its operation in various circuits.
The country of origin for this phototransistor is India.
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