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onsemi Digital Transistor N-Channel Through Hole TO-3P, 3-Pin, Maximum Power Dissipation 312W FDA38N30

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 18.9mm
Length 16.2mm
Model FDA38N30
Width 5mm
Mount Type Through Hole
Series UniFETTM MOSFET
Maximum Operating Temperature 150°C
Package Type TO-3P
Standards/Approvals RoHS
Pin Count 3
Transistor Polarity N-Channel
Maximum Power Dissipation Pd 312W

Key Features

  • Maximum power dissipation of 312 watts for robust performance.
  • Package type TO-3P with through hole mount for reliable installation.
  • N-Channel transistor polarity suitable for switching and amplification.
  • Compact dimensions with 16.2 mm length, 18.9 mm height, and 5 mm width.
  • Maximum operating temperature rated at 150°C for industrial use.
  • Compliant with RoHS standards ensuring environmental safety.
  • UniFETTM MOSFET series provides optimized on-state resistance and switching.
  • Ideal for power converter applications including power factor correction and flat panel displays.

Product Description

onsemi FDA38N30 is a digital N-Channel transistor housed in a TO-3P package with 3 pins, designed for through hole mounting. It supports a maximum power dissipation of 312W, making it suitable for medium to high power electronic circuit applications.

The transistor features a maximum operating temperature of 150°C, ensuring performance stability in demanding industrial environments. Its compact size with dimensions 16.2 mm by 18.9 mm by 5 mm allows easy integration in tight PCB layouts.

This device belongs to the UniFETTM MOSFET series characterized by low on-state resistance, reduced gate charge, and improved switching performance, optimizing efficiency and thermal management in circuits.

Applications include switching power converters, power factor correction (PFC) circuits, flat panel display TVs, ATX power supplies, and electronic lamp ballasts. It is RoHS compliant, ensuring that it meets environmental and safety standards.

The transistor’s N-Channel polarity makes it ideal for a variety of digital switching and amplification uses across industrial and electronic component manufacturing. Maximum power dissipation of 312 watts. TO-3P package type with through hole mount.

N-Channel transistor polarity for versatility. Compact dimensions for flexible circuit design. Maximum operating temperature up to 150°C. RoHS compliant for regulatory adherence. Part of UniFETTM MOSFET series for enhanced efficiency.

Suitable for power converters and electronic ballast applications.

This product is sourced from onsemi and manufactured in China. It provides a reliable and efficient solution for high-performance electronic designs requiring durable N-Channel transistors. Browse the Electronics & Electricals category at EnvMart for a comprehensive range of semiconductors and Digital Transistors for your industrial projects.

onsemi Digital Transistor N-Channel Through Hole TO-3P, 3-Pin, Maximum Power Dissipation 312W FDA38N30
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Frequently Asked Questions

The maximum power dissipation of this digital N-Channel transistor is 312 watts, making it suitable for medium to high power electronic circuit applications.

This model has compact dimensions of 16.2 mm in length, 18.9 mm in height, and 5 mm in width, allowing for easy integration in tight PCB layouts.

The maximum operating temperature for this transistor is rated at 150°C, ensuring performance stability in demanding industrial environments.

The FDA38N30 is housed in a TO-3P package type, designed for through hole mounting, which provides reliable installation.

This model features an N-Channel transistor polarity, making it suitable for various digital switching and amplification applications.

It belongs to the UniFETTM MOSFET series, characterized by low on-state resistance and improved switching performance.

The FDA38N30 is RoHS compliant, ensuring it meets environmental and safety standards.

This model is suitable for applications such as switching power converters, power factor correction circuits, and electronic lamp ballasts.

This transistor has a total of 3 pins, facilitating its connection in electronic circuits.

The low on-state resistance in the UniFETTM MOSFET series optimizes efficiency and thermal management in circuits, enhancing overall performance.

This product is manufactured in China, ensuring compliance with the specified standards.

The FDA38N30 requires through hole mounting, which is typical for reliable installation in various electronic applications.

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