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ROHM PNP Power Transistor 3 A 50 V 3-Pin SOT-89 2SAR533P5T100

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ROHM PNP Power Transistor 3 A 50 V 3-Pin SOT-89 2SAR533P5T100

Name: ROHM PNP Power Transistor 3 A 50 V 3-Pin SOT-89 2SAR533P5T100
Brand: ROHM
SKU: 143523
Price: 0.33 USD
Availability: InStock

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Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	1.5mm
Length	4.7mm
Model	2SAR533P5T100
Width	2.7mm
Mount Type	Surface
Series	2SAR533P5
Maximum Operating Temperature	150°C
Package Type	SOT-89
Pin Count	3
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	180
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-6V
Maximum Collector Base Voltage VCBO	-50V
Maximum Power Dissipation Pd	500mW
Maximum DC Collector Current Idc	3A
Transistor Configuration	Common Emitter
Maximum Transition Frequency ft	100MHz

Key Features

Designed for surface mount applications with common emitter configuration.
Maximum DC collector current of 3 amperes for robust power handling.
Collector-emitter voltage rating of 50 volts ensures versatility in circuits.
Maximum power dissipation of 500 milliwatts for efficient thermal management.
High DC current gain minimum of 180 for effective amplification.
Maximum operating temperature up to 150 degrees Celsius for reliability in harsh environments.
Compact SOT-89 package with dimensions 4.7 mm length, 2.7 mm width, and 1.5 mm height.
Transition frequency up to 100 MHz for high-frequency applications.

Product Description

ROHM 2SAR533P5T100 is a PNP Power Transistor designed for surface mount technology applications. It features a common emitter configuration delivering a maximum DC collector current of 3 A and a collector-emitter voltage of 50 V. The transistor is housed in a compact 3-Pin SOT-89 package measuring 4.7 mm length, 2.7 mm width, and 1.5 mm height, suitable for space-conscious circuit designs.

This transistor supports a maximum power dissipation of 500 mW, enabling it to operate effectively in medium power amplification scenarios. It offers a minimum DC current gain (hFE) of 180, providing reliable signal amplification in bipolar transistor circuits. The maximum operating temperature of 150°C ensures robust performance in industrial and commercial electronic equipment.

The device's maximum transition frequency of 100 MHz allows it to be used in high-frequency signal processing and switching applications. Voltage ratings include a collector-base maximum of -50 V and an emitter-base maximum of -6 V, safeguarding against voltage transients and enhancing device longevity.

Ideal for use in power control circuits, amplification modules, and other semiconductor applications requiring PNP transistor polarity and compact footprint. This ROHM transistor complies with standard industry requirements but does not hold specific certifications or automotive standard compliance.

3 A maximum DC collector current. 50 V maximum collector-emitter voltage. Compact 3-Pin SOT-89 surface mount package. 500 mW power dissipation capability. High DC current gain of at least 180. Operating temperature range up to 150°C.

100 MHz transition frequency for fast switching. Negative voltage protection on collector-base and emitter-base. PNP transistor suitable for various electronic devices.

Use this bipolar transistor for designing efficient power electronics, amplification circuits, and surface-mounted electronic components. Explore the ROHM brand for reliable semiconductor solutions at EnvMart.

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