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ROHM N-Channel MOSFET 250 mA 60 V Enhancement Surface Mount 3-Pin SOT-723 RSM002N06T2L

Category Discrete Semiconductor Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 450μm
Length 1.3mm
Model RSM002N06T2L
Width 900μm
Mount Type Surface
Series RSM002N06
Maximum Operating Temperature 150°C
Package Type SOT-723
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 250mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 12Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 50W
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Compact 3-pin SOT-723 surface-mount package suitable for space-constrained applications.
  • Maximum power dissipation rating of 50 W allows efficient heat handling.
  • Wide operating temperature range from -55°C to 150°C for reliable performance.
  • Forward voltage of 1.2 V ensures low conduction losses in circuits.
  • Drain-source resistance of 12 Ω minimizes power loss during operation.
  • Maximum gate-source voltage rating of ±20 V enhances robustness against voltage spikes.
  • Small dimensions with length 1.3 mm, width 900 μm, and height 450 μm to fit compact PCB layouts.
  • Designed for surface mounting, facilitating automated assembly processes.

Product Description

ROHM RSM002N06T2L is a N-Channel MOSFET transistor designed for enhancement mode switching applications with a maximum continuous drain current of 250 mA and a drain-source voltage of 60 V. This device is packaged in a compact 3-pin SOT-723 surface-mount package, ideal for compact and space-sensitive electronic assemblies.

The MOSFET features a maximum power dissipation rating of 50 W, enabling it to handle significant power levels with effective thermal management. It operates reliably across a wide temperature range from -55°C to 150°C, ensuring stable performance even under harsh environmental conditions.

With a maximum drain-source resistance (Rds) of 12 Ω and a forward voltage of 1.2 V, this MOSFET offers efficient conduction with minimized power losses, suitable for energy-conscious designs. Its gate-source voltage tolerance of ±20 V provides robustness against voltage stress and transient events in power circuits.

The precise dimensions of 1.3 mm length, 900 μm width, and 450 μm height make the device compatible with dense PCB layouts and facilitate automated surface mounting processes. This product is ideal for industrial, commercial, and consumer electronic applications where compactness and reliable switching are essential.

Common use cases include power regulation circuits, switching power supplies, and control circuits in semiconductor devices. ROHM’s semiconductor solutions are well-regarded for quality and reliability in the electronics manufacturing industry.

Compact 3-pin SOT-723 surface-mount package for space-saving designs. Enhanced voltage and current ratings suitable for low power switching applications. Wide operating temperature range supporting robust applications. Low conduction losses with 12 Ω maximum drain-source resistance.

Robust gate-source voltage rating of ±20 V for reliable operation. High power dissipation capacity for efficient thermal management. Small footprint dimensions facilitating automated assembly. New product condition ensuring highest performance standards.

Explore the extensive range of semiconductor and discrete electronic components in the Semiconductor category on EnvMart for your industrial and commercial electronics needs.

Explore more products in our Discrete Semiconductor category.

ROHM N-Channel MOSFET 250 mA 60 V Enhancement Surface Mount 3-Pin SOT-723 RSM002N06T2L
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Frequently Asked Questions

The maximum continuous drain current for this model is 250 mA.

This MOSFET has a maximum drain-source voltage rating of 60 V.

It has a maximum power dissipation rating of 50 W, allowing for effective thermal management.

The maximum gate-source voltage rating is ±20 V, providing robustness against voltage spikes.

The dimensions of the SOT-723 package are 1.3 mm in length, 900 μm in width, and 450 μm in height.

The forward voltage is 1.2 V, which helps to minimize conduction losses in circuits.

The maximum drain-source resistance (Rds) is 12 Ω, which minimizes power loss during operation.

It operates reliably over a wide temperature range from -55°C to 150°C.

This model features a 3-pin configuration.

It is designed for surface mounting, making it suitable for automated assembly processes.

The country of origin for this MOSFET is India.

This model is suitable for power regulation circuits, switching power supplies, and control circuits in semiconductor devices.

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