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onsemi Silicon Junction Switching Diode, Common Cathode, 6 A, 200 V, 3-Pin TO-252 MURD620CTT4G

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onsemi Silicon Junction Switching Diode, Common Cathode, 6 A, 200 V, 3-Pin TO-252 MURD620CTT4G

Name: onsemi Silicon Junction Switching Diode, Common Cathode, 6 A, 200 V, 3-Pin TO-252 MURD620CTT4G
Brand: onsemi
SKU: 138689

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Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.38mm
Length	6.73mm
Model	MURD620CTT4G
Width	6.22mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	TO-252
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Diode Configuration	Common Cathode
Peak Non-Repetitive Forward Surge Current Ifsm	50A
Maximum Forward Voltage Vf	1.2V
Peak Reverse Recovery Time trr	35ns
Maximum Forward Current If	6A
Maximum Peak Reverse Repetitive Voltage Vrrm	200V

Key Features

Designed for surface mount applications with TO-252 package type.
Maximum forward voltage of 1.2 V ensures efficient conduction.
Peak reverse recovery time of 35 ns supports fast switching.
Operates reliably between -65°C to 175°C temperature range.
Peak non-repetitive forward surge current capability of 50 A for transient robustness.
Compact dimensions of length 6.73 mm, width 6.22 mm, and height 2.38 mm.
Provides common cathode diode configuration for multi-diode circuits.
No automotive standard certifications, suitable for general industrial use.

Product Description

onsemi MURD620CTT4G is a high-performance silicon junction diode featuring a common cathode configuration housed in a surface-mount TO-252 package. It supports a maximum forward current of 6 A and a peak repetitive reverse voltage of 200 V, making it suitable for robust power and switching applications.

This diode exhibits a low forward voltage drop of 1.2 V, enhancing energy efficiency in electronic circuits. Its fast switching performance is evidenced by a peak reverse recovery time of 35 ns, catering well to high-speed switching needs in industrial and commercial electronic equipment.

The device operates reliably across a wide thermal range from -65°C to 175°C, ensuring dependable operation in diverse environmental conditions. Its compact physical dimensions (6.73 mm length, 6.22 mm width, 2.38 mm height) allow for efficient PCB design with minimal space consumption.

The diode's peak non-repetitive forward surge current rating of 50 A adds transient robustness, protecting circuits against voltage spikes and surges common in power electronics and switching regulators. Although it lacks specific automotive certifications, it is well-suited for general power electronics, industrial automation, switching power supplies, and other semiconductor applications.

This product falls under the Switching Diodes category within the Semiconductor segment of Electronics & Electricals, making it integral to electronic component inventories for manufacturers, engineers, and designers.

Common cathode silicon junction diode in TO-252 surface-mount package. Maximum forward current of 6 A with 200 V peak reverse voltage. Forward voltage drop of 1.2 V and peak reverse recovery time of 35 ns. Operates from -65°C up to 175°C for broad environmental tolerance.

Capable of withstanding 50 A peak non-repetitive surge current. Compact dimensions ensure efficient PCB integration. Suitable for industrial, power electronics, and switching diode applications. No automotive certifications apply to this model.

Explore more semiconductor and switching diode solutions in the Electronics & Electricals category at EnvMart.