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Nexperia 4-Element Uni-Directional TVS Diode 30 W, 5-Pin Surface Mount UMT PESD5V0L4UG,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 2.2mm |
| Model | PESD5V0L4UG,115 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | UMT |
| Minimum Operating Temperature | -65°C |
| Pin Count | 5 |
| Number of Elements per Chip | 4 |
| Clamping Voltage VC | 13V |
| Diode Configuration | Common Anode |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 6.46V |
| Maximum Reverse Stand-off Voltage Vwm | 5V |
| Peak Pulse Power Dissipation Pppm | 30W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 2.5A |
| Maximum Reverse Leakage Current | 25nA |
Key Features
- Common anode diode configuration for effective ESD protection.
- Uni-directional design suitable for transient voltage suppression applications.
- Minimum breakdown voltage of 6.46 V ensured for reliable operation.
- Clamping voltage of 13 V supports surge protection.
- Peak pulse power dissipation rating of 30 W for transient events.
- Compact dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height.
- Operational temperature range from -65°C to 150°C for harsh environments.
- Designed with 4 elements per chip in a 5-pin UMT package.
Product Description
Nexperia PESD5V0L4UG,115 is a 4-element unidirectional transient voltage suppressor diode designed to protect sensitive electronic components from transient voltage spikes. Encapsulated in a compact 5-pin surface mount UMT package, this TVS diode offers robust electrostatic discharge (ESD) protection with a peak pulse power dissipation of 30 W.
Its common anode configuration and unidirectional design make it ideal for circuits requiring reliable transient voltage suppression, such as in electronic and semiconductor applications. The diode's minimum breakdown voltage is rated at 6.46 V, with a clamping voltage of 13 V, providing effective protection against voltage surges.
The diode supports a wide operating temperature range from -65°C to 150°C, making it suitable for industrial, automotive (non-certified), and general electronic manufacturing environments. The device features low leakage current of 25 nA, minimizing power consumption in protected circuits.
The physical package dimensions of length 2.2 mm, width 1.35 mm, and height 1 mm allow for compact PCB designs using surface mount technology. Common anode diode configuration for ESD protection. Uni-directional transient voltage suppressor for effective surge handling.
Rated minimum breakdown voltage of 6.46 V and maximum reverse stand-off voltage of 5 V. Peak pulse power dissipation up to 30 W ensures transient suppression capability. Clamping voltage of 13 V supports circuit protection requirements.
4 elements integrated per chip in a 5-pin UMT package. Low leakage current and wide operating temperature range. Compact surface mount package suitable for space-limited applications.
This diode is recommended for use in industrial electronics, semiconductor, electronic components manufacturing, power supply circuits, and transient voltage protection applications where reliable suppression of ESD and voltage transients is critical.
Available for integration into design systems with support for 3D mechanical models and schematics through DesignSpark and other PCB design tools. Explore similar TVS Diodes and other semiconductor components at EnvMart for comprehensive electronic solutions.
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Frequently Asked Questions
The peak pulse power dissipation rating of this model is 30 W, allowing it to effectively handle transient voltage spikes.
The clamping voltage for this diode is 13 V, which supports its surge protection capabilities.
The minimum breakdown voltage is rated at 6.46 V, ensuring reliable operation during transient events.
This unit has compact dimensions of 2.2 mm in length, 1.35 mm in width, and 1 mm in height, suitable for space-limited applications.
The operational temperature range for this model is from -65°C to 150°C, making it suitable for harsh environments.
This diode features 4 elements per chip, providing enhanced ESD protection.
It uses a common anode diode configuration, which is effective for ESD protection.
The maximum reverse stand-off voltage is rated at 5 V, which is important for its protective function.
The maximum reverse leakage current is 25 nA, which helps minimize power consumption in protected circuits.
This diode is designed for surface mount applications, allowing for compact PCB designs.
The maximum peak pulse current is rated at 2.5 A, ensuring it can handle significant transient events.
This model is recommended for use in industrial electronics, semiconductor applications, and transient voltage protection circuits.
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