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Infineon MOSFET Gate Driver Dual Output 2.5 A Peak Current 8-Pin DSO Package 10-20 V 2ED2181S06FXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.72mm |
| Length | 4.9mm |
| Model | 2ED2181S06FXUMA1 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | 2ED2181S06F |
| Output Current | 2.5A |
| Maximum Operating Temperature | 125°C |
| Package Type | DSO |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 15ns |
| Pin Count | 8 |
| Maximum Supply Voltage | 20V |
| Minimum Supply Voltage | 10V |
| Number of Drivers | 2 |
| Fall Time | 30ns |
| Driver Type | MOSFET |
Key Features
- Operates with a supply voltage range from 10 V to 20 V.
- Features fast switching with 15 ns rise time and 30 ns fall time.
- Uses an 8-pin DSO surface-mount package for easy PCB assembly and compact design.
- Suitable for use in half-bridge, full-bridge, and synchronous rectification gate-drive circuits.
- Supports extended temperature range from -40°C to 125°C for demanding environments.
- Ideal for driving power MOSFETs in DC-DC converters and motor control power stages.
Product Description
Infineon 2ED2181S06FXUMA1 is a MOSFET Gate Driver designed for industrial and electronic applications requiring reliable and efficient switching. This dual-channel device can independently drive two MOSFET gates, operating from a supply voltage of 10 V to 20 V. It is housed in a compact 8-pin DSO surface-mount package, facilitating high-density PCB assembly.
The gate driver supports rapid switching with a peak output current of 2.5 A per channel, complemented by a swift 15 ns rise time and 30 ns fall time, which minimizes switching losses and improves overall efficiency. It functions reliably across a broad ambient temperature range from -40°C to 125°C, suitable for harsh industrial, automotive, and power management environments.
This device is ideally used in DC-DC converters, half-bridge and full-bridge switching stages, motor-control power stages requiring fast transitions, and synchronous rectification gate-drive tasks. Its surface-mount form factor supports compact power modules where board space optimization is necessary.
Operates from 10 V to 20 V supply voltage range. Dual independent outputs provide two-channel MOSFET gate drive control. 2.5 A peak output current enables rapid gate charging and discharging. Fast 15 ns rise time reduces turn-on intervals for improved switching speeds.
30 ns fall time improves turn-off duration and performance. 8-pin DSO surface-mount packaging simplifies PCB assembly and density. Wide temperature operation between -40°C and 125°C ensures reliability in adverse conditions.
Infineon’s 2ED2181S06FXUMA1 MOSFET Gate Driver is an essential component in power management ICs used for industrial, electronic, automotive, motor control, and manufacturing applications. It supports efficient power handling and fast switching necessary for high-performance electronic systems.
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Frequently Asked Questions
It operates with a supply voltage range from 10 V to 20 V.
This model provides a peak output current of 2.5 A per channel.
It features a rise time of 15 ns and a fall time of 30 ns.
It functions reliably across a temperature range from -40°C to 125°C.
This model has two independent outputs for driving MOSFET gates.
It is housed in an 8-pin DSO surface-mount package.
It is suitable for use in DC-DC converters, half-bridge and full-bridge circuits, and motor control power stages.
The dimensions are 1.72 mm in height, 4.9 mm in length, and 3.9 mm in width.
It is a MOSFET gate driver designed for efficient switching.
The fast switching times help minimize switching losses and improve overall efficiency in power management applications.
The country of origin for this product is India.
It belongs to the 2ED2181S06F series.
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